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PSMN015-60BS-VB Product details
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Product Introduction
**PSMN015-110P-VB** is a high-performance N-channel MOSFET in a TO220 package, designed for high voltage and high current applications. With a maximum drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 100A, this MOSFET is suitable for power management systems that require high efficiency and reliability. Its low on-resistance (RDS(ON)) enables it to effectively reduce energy loss and improve system efficiency under high loads. With its advanced Trench technology, PSMN015-110P-VB is able to excel in fast switching and thermal performance, and is widely used in various electronic devices.
**PSMN015-110P-VB** is a high-performance N-channel MOSFET in a TO220 package, designed for high voltage and high current applications. With a maximum drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 100A, this MOSFET is suitable for power management systems that require high efficiency and reliability. Its low on-resistance (RDS(ON)) enables it to effectively reduce energy loss and improve system efficiency under high loads. With its advanced Trench technology, PSMN015-110P-VB is able to excel in fast switching and thermal performance, and is widely used in various electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PSMN015-110P-VB
- **Package**: TO220
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 20mΩ (VGS = 4.5V)
- 9mΩ (VGS = 10V)
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench
- **Model**: PSMN015-110P-VB
- **Package**: TO220
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 20mΩ (VGS = 4.5V)
- 9mΩ (VGS = 10V)
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power management system**: PSMN015-110P-VB is widely used in switching power supplies and DC-DC converters to achieve efficient power conversion, reduce energy loss, and improve overall system efficiency.
2. **Industrial equipment**: In the motor control circuits of various industrial equipment, this MOSFET can provide highly reliable current drive to ensure stable operation of the equipment under high load.
3. **Electric vehicle**: This MOSFET is suitable for battery management systems and power control modules in electric vehicles to optimize power efficiency and improve the overall performance and endurance of the vehicle.
4. **Renewable energy system**: PSMN015-110P-VB can effectively convert DC to AC in solar inverters to support the efficient use of renewable energy.
5. **High-frequency switching circuit**: In LED drivers and high-frequency power amplifiers, this MOSFET can provide fast switching response and low conduction loss to meet the high performance requirements of modern electronic devices.
Through these applications, PSMN015-110P-VB demonstrates its importance in high-performance and high-reliability circuit design, adapting to a variety of complex working environments and providing excellent performance.
1. **Power management system**: PSMN015-110P-VB is widely used in switching power supplies and DC-DC converters to achieve efficient power conversion, reduce energy loss, and improve overall system efficiency.
2. **Industrial equipment**: In the motor control circuits of various industrial equipment, this MOSFET can provide highly reliable current drive to ensure stable operation of the equipment under high load.
3. **Electric vehicle**: This MOSFET is suitable for battery management systems and power control modules in electric vehicles to optimize power efficiency and improve the overall performance and endurance of the vehicle.
4. **Renewable energy system**: PSMN015-110P-VB can effectively convert DC to AC in solar inverters to support the efficient use of renewable energy.
5. **High-frequency switching circuit**: In LED drivers and high-frequency power amplifiers, this MOSFET can provide fast switching response and low conduction loss to meet the high performance requirements of modern electronic devices.
Through these applications, PSMN015-110P-VB demonstrates its importance in high-performance and high-reliability circuit design, adapting to a variety of complex working environments and providing excellent performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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