Product introduction：
PSMN013-30LL-VB Product Introduction
PSMN013-30LL-VB is a high-efficiency N-Channel MOSFET in a DFN8 (3X3) package designed for low voltage and high current applications. The device has a rated drain-to-source voltage (VDS) of 30V and a gate-to-source voltage (VGS) of ±20V, making it suitable for a variety of power management and load switching scenarios. The on-resistance (RDS(ON)) of the PSMN013-30LL-VB is 19mΩ at VGS=4.5V, and drops to 13mΩ at VGS=10V, ensuring minimal energy loss under high current conditions. Its threshold voltage (Vth) is 1.7V, ensuring fast turn-on at lower gate voltages. Using advanced Trench technology, the PSMN013-30LL-VB has excellent switching performance and thermal management capabilities, making it very suitable for modern electronic design needs.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
30A |
|
|
13mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
30A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
30A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: PSMN013-30LL-VB
- **Package**: DFN8(3X3)
- **Configuration**: Single N-Channel
- **Drain to Source Voltage (VDS)**: 30V
- **Gate to Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 19mΩ @ VGS=4.5V
- 13mΩ @ VGS=10V
- **Maximum Drain Current (ID)**: 30A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Switching power supply**: PSMN013-30LL-VB is ideal for use in switching power supplies and DC-DC converters. Its low on-resistance and high current handling capability enable it to achieve high efficiency and reduce energy loss during power conversion.
2. **Motor control**: In motor drive applications, this MOSFET can be used as a switching element to support large current requirements, ensure smooth motor start-up and precise control, and improve system performance.
3. **LED lighting system**: In LED drive circuits, PSMN013-30LL-VB can be used to adjust the brightness and switch of LEDs, ensuring efficient thermal management and long-term stable operation.
4. **Portable devices**: This MOSFET is suitable for power management of portable devices such as mobile power supplies and smartphones, and can effectively control the battery charging and discharging process to extend the service life of the device.
PSMN013-30LL-VB has become an indispensable switching component in modern electronic devices with its excellent performance and wide application range, and can meet the design requirements of high efficiency and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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