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PSMN013-100XS-VB Product details
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PSMN013-100XS-VB Product Introduction
PSMN013-100XS-VB is a high-performance N-channel MOSFET in a TO220F package, designed for high voltage and high current applications. With a maximum drain-to-source voltage (VDS) of 100V, the device can support a drain current (ID) of up to 90A, making it ideal for high-power power management and switch control applications. The on-resistance (RDS(ON)) of the PSMN013-100XS-VB is 9mΩ at a VGS of 10V, demonstrating its excellent conductivity and thermal management capabilities. With its Trench technology, the MOSFET maintains excellent efficiency and stability under high load conditions.
PSMN013-100XS-VB is a high-performance N-channel MOSFET in a TO220F package, designed for high voltage and high current applications. With a maximum drain-to-source voltage (VDS) of 100V, the device can support a drain current (ID) of up to 90A, making it ideal for high-power power management and switch control applications. The on-resistance (RDS(ON)) of the PSMN013-100XS-VB is 9mΩ at a VGS of 10V, demonstrating its excellent conductivity and thermal management capabilities. With its Trench technology, the MOSFET maintains excellent efficiency and stability under high load conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 2.5V | 90A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 2.5V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 2.5V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: PSMN013-100XS-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain to source voltage (VDS)**: 100V
- **Maximum gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 9mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 90A
- **Technology**: Trench technology
- **Model**: PSMN013-100XS-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain to source voltage (VDS)**: 100V
- **Maximum gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 9mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 90A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Switching power supply**: PSMN013-100XS-VB performs well in high-power switching power supplies, can efficiently control the switching of the power supply, improve the conversion efficiency of the power supply, reduce energy loss, and maintain temperature stability.
2. **Motor control**: This MOSFET can be used in motor drive systems to effectively regulate the start and stop and speed of the motor, and is suitable for various industrial automation equipment and household appliances.
3. **Inverter**: PSMN013-100XS-VB is suitable for use in solar inverters and other renewable energy systems, and can achieve efficient energy conversion under high frequency and high power conditions, improving the overall performance of the system.
4. **Battery management system**: In the battery management system, the device can effectively manage the battery charging and discharging process, protect the battery from overcharging and over-discharging, extend the battery life, and ensure its safe and reliable operation.
Through these applications, PSMN013-100XS-VB demonstrates its wide applicability in high power and high efficiency fields, providing a stable and reliable solution for modern electronic devices.
1. **Switching power supply**: PSMN013-100XS-VB performs well in high-power switching power supplies, can efficiently control the switching of the power supply, improve the conversion efficiency of the power supply, reduce energy loss, and maintain temperature stability.
2. **Motor control**: This MOSFET can be used in motor drive systems to effectively regulate the start and stop and speed of the motor, and is suitable for various industrial automation equipment and household appliances.
3. **Inverter**: PSMN013-100XS-VB is suitable for use in solar inverters and other renewable energy systems, and can achieve efficient energy conversion under high frequency and high power conditions, improving the overall performance of the system.
4. **Battery management system**: In the battery management system, the device can effectively manage the battery charging and discharging process, protect the battery from overcharging and over-discharging, extend the battery life, and ensure its safe and reliable operation.
Through these applications, PSMN013-100XS-VB demonstrates its wide applicability in high power and high efficiency fields, providing a stable and reliable solution for modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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