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PSMN009-100B-VB Product details
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Product Introduction
**PSMN009-100B-VB** is a high-efficiency N-channel MOSFET in a TO263 package, designed for high voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET can reach 100V and can withstand a leakage current (ID) of up to 100A. With its low on-resistance (RDS(ON)), this product excels in power loss and is suitable for power management solutions that require high efficiency and reliability. The application of its Trench technology gives it better performance in dynamic characteristics and thermal performance, and it is widely used in various electronic devices.
**PSMN009-100B-VB** is a high-efficiency N-channel MOSFET in a TO263 package, designed for high voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET can reach 100V and can withstand a leakage current (ID) of up to 100A. With its low on-resistance (RDS(ON)), this product excels in power loss and is suitable for power management solutions that require high efficiency and reliability. The application of its Trench technology gives it better performance in dynamic characteristics and thermal performance, and it is widely used in various electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PSMN009-100B-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ (VGS = 4.5V)
- 10mΩ (VGS = 10V)
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench
- **Model**: PSMN009-100B-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ (VGS = 4.5V)
- 10mΩ (VGS = 10V)
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power converter**: PSMN009-100B-VB is suitable for switching power supplies and DC-DC converters, providing efficient power conversion, reducing energy loss and improving overall system efficiency.
2. **Power tools**: In the power management system of power tools, this MOSFET can stably drive high-power motors to ensure high performance and long life of the equipment.
3. **Electric vehicles**: This MOSFET is widely used in the power control module of electric vehicles to help optimize power distribution and energy recovery, and improve the overall energy efficiency of the vehicle.
4. **Solar inverter**: PSMN009-100B-VB is also suitable for solar inverters, supporting the use of renewable energy by efficiently converting DC to AC.
5. **High-frequency switching circuit**: This MOSFET is suitable for high-frequency applications such as LED drivers and RF power amplifiers, providing fast switching response and low conduction loss to meet the performance requirements of modern electronic devices.
Through these applications, PSMN009-100B-VB demonstrates its importance in high-performance and high-reliability circuit design and is able to adapt to a variety of complex working environments.
1. **Power converter**: PSMN009-100B-VB is suitable for switching power supplies and DC-DC converters, providing efficient power conversion, reducing energy loss and improving overall system efficiency.
2. **Power tools**: In the power management system of power tools, this MOSFET can stably drive high-power motors to ensure high performance and long life of the equipment.
3. **Electric vehicles**: This MOSFET is widely used in the power control module of electric vehicles to help optimize power distribution and energy recovery, and improve the overall energy efficiency of the vehicle.
4. **Solar inverter**: PSMN009-100B-VB is also suitable for solar inverters, supporting the use of renewable energy by efficiently converting DC to AC.
5. **High-frequency switching circuit**: This MOSFET is suitable for high-frequency applications such as LED drivers and RF power amplifiers, providing fast switching response and low conduction loss to meet the performance requirements of modern electronic devices.
Through these applications, PSMN009-100B-VB demonstrates its importance in high-performance and high-reliability circuit design and is able to adapt to a variety of complex working environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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