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PSMN004-60B-VB Product details
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Product Introduction
PSMN004-60B-VB is a high-efficiency N-channel MOSFET in TO263 package, designed for high current and high voltage applications. With a maximum drain-source voltage of 60V, it can carry a leakage current of up to 150A, suitable for a variety of high-performance power management and switching applications. This MOSFET adopts advanced Trench technology and has extremely low on-resistance (4mΩ@VGS=10V), ensuring excellent energy efficiency and thermal management under high load conditions. This MOSFET is very suitable for application scenarios such as high-power power converters, inverters and motor drives.
PSMN004-60B-VB is a high-efficiency N-channel MOSFET in TO263 package, designed for high current and high voltage applications. With a maximum drain-source voltage of 60V, it can carry a leakage current of up to 150A, suitable for a variety of high-performance power management and switching applications. This MOSFET adopts advanced Trench technology and has extremely low on-resistance (4mΩ@VGS=10V), ensuring excellent energy efficiency and thermal management under high load conditions. This MOSFET is very suitable for application scenarios such as high-power power converters, inverters and motor drives.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PSMN004-60B-VB
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 150A
- **Technology**: Trench technology
- **Model**: PSMN004-60B-VB
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
Applications and Modules
PSMN004-60B-VB MOSFET is widely used in many fields and modules, including:
1. **Power Converter**: This MOSFET performs well in DC-DC converters and AC-DC power supplies, enabling efficient power conversion and improving overall system efficiency, and is suitable for applications such as power adapters and chargers.
2. **Motor Drive**: In industrial and automotive applications, PSMN004-60B-VB can be used in high-power motor drive circuits to provide fast switching control to ensure efficient and reliable motor operation.
3. **Inverter**: This MOSFET is suitable for solar inverters and other types of power inverters as an efficient switching element to improve energy conversion efficiency and system stability.
4. **Load Switch**: PSMN004-60B-VB is suitable for various load switch applications, enabling precise current control and protecting the system from overload and short circuit.
5. **LED drive**: In high-power LED lighting applications, this MOSFET can effectively drive LED arrays, provide stable current output, and optimize lighting performance.
In summary, PSMN004-60B-VB MOSFET performs well in high-current and high-voltage applications, is widely used in modern electronic devices and systems, and has good market application prospects.
PSMN004-60B-VB MOSFET is widely used in many fields and modules, including:
1. **Power Converter**: This MOSFET performs well in DC-DC converters and AC-DC power supplies, enabling efficient power conversion and improving overall system efficiency, and is suitable for applications such as power adapters and chargers.
2. **Motor Drive**: In industrial and automotive applications, PSMN004-60B-VB can be used in high-power motor drive circuits to provide fast switching control to ensure efficient and reliable motor operation.
3. **Inverter**: This MOSFET is suitable for solar inverters and other types of power inverters as an efficient switching element to improve energy conversion efficiency and system stability.
4. **Load Switch**: PSMN004-60B-VB is suitable for various load switch applications, enabling precise current control and protecting the system from overload and short circuit.
5. **LED drive**: In high-power LED lighting applications, this MOSFET can effectively drive LED arrays, provide stable current output, and optimize lighting performance.
In summary, PSMN004-60B-VB MOSFET performs well in high-current and high-voltage applications, is widely used in modern electronic devices and systems, and has good market application prospects.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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