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PSMN003-30B-VB Product details
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PSMN003-30B-VB Product Introduction
PSMN003-30B-VB is a high-performance N-channel MOSFET in a TO263 package, designed for high current and low voltage applications. The device has a maximum drain-to-source voltage (VDS) of 30V and can support a drain current (ID) of up to 150A, making it ideal for applications requiring high power handling. The on-resistance (RDS(ON)) of the PSMN003-30B-VB is 3.2mΩ at a VGS of 4.5V, and drops to 2.3mΩ at a VGS of 10V, demonstrating its excellent conductivity and low power consumption. With its Trench technology, this MOSFET not only has excellent thermal management capabilities, but also ensures stability in high-frequency applications.
PSMN003-30B-VB is a high-performance N-channel MOSFET in a TO263 package, designed for high current and low voltage applications. The device has a maximum drain-to-source voltage (VDS) of 30V and can support a drain current (ID) of up to 150A, making it ideal for applications requiring high power handling. The on-resistance (RDS(ON)) of the PSMN003-30B-VB is 3.2mΩ at a VGS of 4.5V, and drops to 2.3mΩ at a VGS of 10V, demonstrating its excellent conductivity and low power consumption. With its Trench technology, this MOSFET not only has excellent thermal management capabilities, but also ensures stability in high-frequency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PSMN003-30B-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain to source voltage (VDS)**: 30V
- **Maximum gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ (at VGS=4.5V)
- 2.3mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench technology
- **Model**: PSMN003-30B-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain to source voltage (VDS)**: 30V
- **Maximum gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ (at VGS=4.5V)
- 2.3mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Switching power supply**: PSMN003-30B-VB is ideal for use in high-efficiency switching power supplies, capable of fast switching under high current conditions, improving the overall efficiency of the power supply and reducing energy loss.
2. **Electric vehicle**: In the motor drive and control system of electric vehicles, this MOSFET can be used to efficiently control the start and stop and speed regulation of the motor, ensuring stable performance of the electric vehicle under different load conditions.
3. **Battery management system**: PSMN003-30B-VB plays a key role in the battery management system, capable of efficiently controlling the battery charging and discharging process, ensuring safe and stable operation of the battery, thereby extending the battery life.
4. **Inverter**: The device is suitable for use in solar and wind inverters, capable of achieving efficient energy conversion under high frequency and high power conditions, ensuring the effective use of renewable energy.
Through these applications, PSMN003-30B-VB demonstrates its wide applicability in the field of high power and high efficiency, providing a reliable solution for modern electronic devices.
1. **Switching power supply**: PSMN003-30B-VB is ideal for use in high-efficiency switching power supplies, capable of fast switching under high current conditions, improving the overall efficiency of the power supply and reducing energy loss.
2. **Electric vehicle**: In the motor drive and control system of electric vehicles, this MOSFET can be used to efficiently control the start and stop and speed regulation of the motor, ensuring stable performance of the electric vehicle under different load conditions.
3. **Battery management system**: PSMN003-30B-VB plays a key role in the battery management system, capable of efficiently controlling the battery charging and discharging process, ensuring safe and stable operation of the battery, thereby extending the battery life.
4. **Inverter**: The device is suitable for use in solar and wind inverters, capable of achieving efficient energy conversion under high frequency and high power conditions, ensuring the effective use of renewable energy.
Through these applications, PSMN003-30B-VB demonstrates its wide applicability in the field of high power and high efficiency, providing a reliable solution for modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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