中文
English
PMN42XPE-VB Product details
Back to previous pageProduct introduction：
Product Introduction
PMN42XPE-VB is a high-efficiency P-channel MOSFET in SOT23-6 package, designed for low-voltage applications. Its maximum drain-source voltage is -30V, and its leakage current capability is up to -4.8A, which is suitable for high-performance and miniaturized electronic devices. PMN42XPE-VB adopts advanced Trench technology to ensure that it operates at low on-resistance and provides excellent energy efficiency. It is particularly suitable for power management and switching applications, which can effectively reduce power consumption and improve system performance.
PMN42XPE-VB is a high-efficiency P-channel MOSFET in SOT23-6 package, designed for low-voltage applications. Its maximum drain-source voltage is -30V, and its leakage current capability is up to -4.8A, which is suitable for high-performance and miniaturized electronic devices. PMN42XPE-VB adopts advanced Trench technology to ensure that it operates at low on-resistance and provides excellent energy efficiency. It is particularly suitable for power management and switching applications, which can effectively reduce power consumption and improve system performance.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Detailed parameter description
- **Model**: PMN42XPE-VB
- **Package type**: SOT23-6
- **Configuration**: Single P channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -4.8A
- **Technology**: Trench technology
- **Model**: PMN42XPE-VB
- **Package type**: SOT23-6
- **Configuration**: Single P channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -4.8A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules
PMN42XPE-VB MOSFET is widely used in many fields and modules, including:
1. **Portable electronic devices**: Due to its small SOT23-6 package, PMN42XPE-VB is very suitable for power management modules of portable devices such as smartphones and tablets to help achieve efficient power switching and control.
2. **LED drive circuit**: In LED lighting applications, this MOSFET can be used for switch control, providing low on-resistance to ensure stable operation of LEDs, improve lighting efficiency and extend service life.
3. **Battery management system**: PMN42XPE-VB can be used as a switching element in the battery protection circuit to effectively prevent overcurrent and short circuit, and improve battery safety and service life.
4. **Load switch**: In low-power applications, this MOSFET can be used as a load switch to provide efficient current control to meet the power supply needs of different devices.
5. **Signal switch**: The low threshold voltage and high conduction capability of PMN42XPE-VB make it suitable for use as a switch in signal processing circuits, which can efficiently control the signal path and improve the response speed of the circuit.
In summary, PMN42XPE-VB MOSFET shows excellent performance in miniaturization and high-efficiency applications, and is widely used in modern electronic devices and systems, with good market prospects.
PMN42XPE-VB MOSFET is widely used in many fields and modules, including:
1. **Portable electronic devices**: Due to its small SOT23-6 package, PMN42XPE-VB is very suitable for power management modules of portable devices such as smartphones and tablets to help achieve efficient power switching and control.
2. **LED drive circuit**: In LED lighting applications, this MOSFET can be used for switch control, providing low on-resistance to ensure stable operation of LEDs, improve lighting efficiency and extend service life.
3. **Battery management system**: PMN42XPE-VB can be used as a switching element in the battery protection circuit to effectively prevent overcurrent and short circuit, and improve battery safety and service life.
4. **Load switch**: In low-power applications, this MOSFET can be used as a load switch to provide efficient current control to meet the power supply needs of different devices.
5. **Signal switch**: The low threshold voltage and high conduction capability of PMN42XPE-VB make it suitable for use as a switch in signal processing circuits, which can efficiently control the signal path and improve the response speed of the circuit.
In summary, PMN42XPE-VB MOSFET shows excellent performance in miniaturization and high-efficiency applications, and is widely used in modern electronic devices and systems, with good market prospects.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
