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PMN40UPE-VB Product details
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Product Introduction: PMN40UPE-VB
PMN40UPE-VB is a high-performance unipolar P-type MOSFET in SOT23-6 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is -30V, and it can operate stably under a wide range of gate-source voltage (VGS), suitable for a variety of power management and switching applications. Using advanced Trench technology, PMN40UPE-VB provides low on-resistance, significantly improving efficiency and reducing power consumption.
PMN40UPE-VB is a high-performance unipolar P-type MOSFET in SOT23-6 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is -30V, and it can operate stably under a wide range of gate-source voltage (VGS), suitable for a variety of power management and switching applications. Using advanced Trench technology, PMN40UPE-VB provides low on-resistance, significantly improving efficiency and reducing power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Detailed parameter description:
- **Model**: PMN40UPE-VB
- **Package**: SOT23-6
- **Configuration**: Unipolar P type
- **VDS**: -30V
- **VGS**: ±20V
- **Vth** (threshold voltage): -1.7V
- **RDS(ON)**:
- 54mΩ (VGS=4.5V)
- 49mΩ (VGS=10V)
- **ID** (maximum leakage current): -4.8A
- **Technology**: Trench
- **Model**: PMN40UPE-VB
- **Package**: SOT23-6
- **Configuration**: Unipolar P type
- **VDS**: -30V
- **VGS**: ±20V
- **Vth** (threshold voltage): -1.7V
- **RDS(ON)**:
- 54mΩ (VGS=4.5V)
- 49mΩ (VGS=10V)
- **ID** (maximum leakage current): -4.8A
- **Technology**: Trench
Domain and module applications：
Application areas and module examples:
1. **Power management**:
- PMN40UPE-VB can be used in power switches and power converters to help improve energy efficiency and reduce heat generation, suitable for portable electronic devices and computer power modules.
2. **Battery management system**:
- In the battery management system, this MOSFET can be used for efficient charge and discharge control, ensuring that the battery operates within a safe voltage range and extending battery life.
3. **LED drive circuit**:
- Due to its low on-resistance, PMN40UPE-VB is suitable for LED drive circuits, helping to increase brightness and reduce power consumption, and is widely used in lighting and display devices.
4. **Automotive electronics**:
- In automotive applications, this MOSFET can be used in motor drive and power distribution systems to provide reliable current control and efficient power conversion, ensuring the stability and efficiency of automotive electronic systems.
PMN40UPE-VB is an ideal choice for many modern electronic devices due to its excellent electrical performance and efficient thermal management.
1. **Power management**:
- PMN40UPE-VB can be used in power switches and power converters to help improve energy efficiency and reduce heat generation, suitable for portable electronic devices and computer power modules.
2. **Battery management system**:
- In the battery management system, this MOSFET can be used for efficient charge and discharge control, ensuring that the battery operates within a safe voltage range and extending battery life.
3. **LED drive circuit**:
- Due to its low on-resistance, PMN40UPE-VB is suitable for LED drive circuits, helping to increase brightness and reduce power consumption, and is widely used in lighting and display devices.
4. **Automotive electronics**:
- In automotive applications, this MOSFET can be used in motor drive and power distribution systems to provide reliable current control and efficient power conversion, ensuring the stability and efficiency of automotive electronic systems.
PMN40UPE-VB is an ideal choice for many modern electronic devices due to its excellent electrical performance and efficient thermal management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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