Product introduction：
Product Introduction
PMGD400UN-VB is a dual N-channel MOSFET designed in a small SC70-6 package for compact and high-efficiency electronic applications. Its drain-source voltage (VDS) is 20V, which is suitable for low-voltage drive applications. The threshold voltage range is 0.5V to 1.5V, enabling reliable switching control under low voltage conditions. The device has an on-resistance of 110mΩ (VGS=2.5V) and 86mΩ (VGS=4.5V), respectively, maintaining low conduction losses while providing a maximum drain current of 2.6A. The PMGD400UN-VB uses Trench technology, which enables it to have efficient switching performance and low power consumption in high-frequency applications, making it an ideal choice for portable devices, power management and signal switching.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC70-6 |
Dual-N+N |
20V |
|
0.5~1.5V |
2.6A |
110mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC70-6 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SC70-6 |
Dual-N+N |
20V |
|
0.5~1.5V |
2.6A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SC70-6 |
Dual-N+N |
20V |
|
0.5~1.5V |
2.6A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC70-6 |
Dual-N+N |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: PMGD400UN-VB
- **Package**: SC70-6
- **Configuration**: Dual N+N channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V - 1.5V
- **On-resistance (RDS(ON))**:
- 110mΩ @ VGS=2.5V
- 86mΩ @ VGS=4.5V
- **Maximum leakage current (ID)**: 2.6A
- **Technology**: Trench
Domain and module applications：
Application fields and modules
PMGD400UN-VB is suitable for the following fields and modules:
1. **Portable electronic devices**: Due to its small size and low voltage operation characteristics, PMGD400UN-VB is widely used in power management modules in portable devices such as smartphones and tablets, which can effectively manage power distribution and battery load.
2. **Signal switching and level conversion**: The low on-resistance and dual-channel configuration of this MOSFET make it suitable for signal switching and low-power level conversion circuits, especially in multi-function I/O ports.
3. **Charging module and battery protection circuit**: In the charging and battery protection circuits of mobile devices, PMGD400UN-VB effectively prevents current overload through stable on-resistance, ensuring safe charging and discharging of the battery.
4. **Small motor drive**: It can be used for micro motor control circuits, such as camera lens adjustment devices or small toys, to provide reliable current control and efficient drive.
5. **LED drive circuit**: In low-voltage LED applications, PMGD400UN-VB can provide stable current for the LED drive circuit, making the LED work stably under low voltage conditions and extending the LED life.
PMGD400UN-VB is widely used in modern electronic applications that require high-density and low-power design due to its compact package, efficient switching characteristics and low power consumption, providing a reliable solution for power management and signal control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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