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PJ8205-VB Product details
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PJ8205-VB MOSFET Product Introduction
PJ8205-VB is a high-performance N-channel power MOSFET in TSSOP8 package, designed for low voltage, high efficiency applications. The maximum drain-source voltage (V_DS) of the device is 20V, which is very suitable for use in low voltage power management and load driving circuits. The threshold voltage (V_th) of PJ8205-VB ranges from 0.5V to 1.5V, ensuring that it can be turned on quickly at a lower gate-source voltage and has good switching characteristics. Its on-resistance (R_DS(ON)) is 32mΩ@V_GS=2.5V and 22mΩ@V_GS=4.5V, respectively, ensuring low power consumption in high current applications. The continuous drain current (I_D) of the device can reach 6.6A, which can meet medium load requirements. Based on Trench technology, PJ8205-VB provides excellent current density and low parasitic resistance, ensuring high efficiency under high frequency switching conditions.
PJ8205-VB is a high-performance N-channel power MOSFET in TSSOP8 package, designed for low voltage, high efficiency applications. The maximum drain-source voltage (V_DS) of the device is 20V, which is very suitable for use in low voltage power management and load driving circuits. The threshold voltage (V_th) of PJ8205-VB ranges from 0.5V to 1.5V, ensuring that it can be turned on quickly at a lower gate-source voltage and has good switching characteristics. Its on-resistance (R_DS(ON)) is 32mΩ@V_GS=2.5V and 22mΩ@V_GS=4.5V, respectively, ensuring low power consumption in high current applications. The continuous drain current (I_D) of the device can reach 6.6A, which can meet medium load requirements. Based on Trench technology, PJ8205-VB provides excellent current density and low parasitic resistance, ensuring high efficiency under high frequency switching conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
PJ8205-VB Detailed parameter description
- **Package**: TSSOP8, suitable for high-density layout and provides good thermal management.
- **Configuration**: Common Drain N+N-Channel design, enhanced switching performance and driving capability.
- **Drain-source voltage (V_DS)**: 20V, suitable for low-voltage power management and load control applications.
- **Gate-source voltage (V_GS)**: ±20V, to ensure the stability of the device under various working conditions.
- **Threshold voltage (V_th)**: 0.5~1.5V, convenient for fast switching, suitable for high-frequency applications.
- **On-resistance (R_DS(ON))**:
- 32mΩ@V_GS=2.5V, suitable for lower voltage applications.
- 22mΩ@V_GS=4.5V, providing lower power consumption performance.
- **Drain current (I_D)**: 6.6A, suitable for medium current load applications.
- **Technology**: Trench technology, which enhances current density and switching efficiency, is suitable for use in high-frequency applications.
- **Package**: TSSOP8, suitable for high-density layout and provides good thermal management.
- **Configuration**: Common Drain N+N-Channel design, enhanced switching performance and driving capability.
- **Drain-source voltage (V_DS)**: 20V, suitable for low-voltage power management and load control applications.
- **Gate-source voltage (V_GS)**: ±20V, to ensure the stability of the device under various working conditions.
- **Threshold voltage (V_th)**: 0.5~1.5V, convenient for fast switching, suitable for high-frequency applications.
- **On-resistance (R_DS(ON))**:
- 32mΩ@V_GS=2.5V, suitable for lower voltage applications.
- 22mΩ@V_GS=4.5V, providing lower power consumption performance.
- **Drain current (I_D)**: 6.6A, suitable for medium current load applications.
- **Technology**: Trench technology, which enhances current density and switching efficiency, is suitable for use in high-frequency applications.
Domain and module applications：
Application fields and module examples
1. **Power management system**: The low voltage characteristics and high conductivity of PJ8205-VB make it very suitable for switching power supplies and DC-DC converters, which can effectively improve energy conversion efficiency and reduce heat loss.
2. **LED drive circuit**: This MOSFET can be used in LED drive modules to provide stable current control, help improve the brightness and efficiency of LED lighting, and is particularly suitable for small LED lighting products.
3. **Battery management system (BMS)**: In the battery management system, PJ8205-VB can be used as a switching element to achieve efficient control of the battery charging and discharging process, ensuring the safety and performance optimization of the battery.
4. **Portable device power management**: Due to its compact TSSOP8 package, the device is very suitable for power management of portable electronic devices, providing efficient switching and load driving capabilities in a limited space, providing support for power management solutions for modern mobile devices.
1. **Power management system**: The low voltage characteristics and high conductivity of PJ8205-VB make it very suitable for switching power supplies and DC-DC converters, which can effectively improve energy conversion efficiency and reduce heat loss.
2. **LED drive circuit**: This MOSFET can be used in LED drive modules to provide stable current control, help improve the brightness and efficiency of LED lighting, and is particularly suitable for small LED lighting products.
3. **Battery management system (BMS)**: In the battery management system, PJ8205-VB can be used as a switching element to achieve efficient control of the battery charging and discharging process, ensuring the safety and performance optimization of the battery.
4. **Portable device power management**: Due to its compact TSSOP8 package, the device is very suitable for power management of portable electronic devices, providing efficient switching and load driving capabilities in a limited space, providing support for power management solutions for modern mobile devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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