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PHX6ND50E-VB Product details
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Product Introduction
PHX6ND50E-VB is a high voltage N-channel MOSFET packaged in TO220F, designed for high voltage applications. Its maximum drain-source voltage can reach 650V, with a maximum leakage current capability of 7A, making it very suitable for high voltage, high power power management and control systems. PHX6ND50E-VB uses Plannar technology, which can provide high voltage resistance and good thermal stability to ensure reliability in harsh environments. This MOSFET is particularly suitable for power conversion, motor control and other power electronic devices.
PHX6ND50E-VB is a high voltage N-channel MOSFET packaged in TO220F, designed for high voltage applications. Its maximum drain-source voltage can reach 650V, with a maximum leakage current capability of 7A, making it very suitable for high voltage, high power power management and control systems. PHX6ND50E-VB uses Plannar technology, which can provide high voltage resistance and good thermal stability to ensure reliability in harsh environments. This MOSFET is particularly suitable for power conversion, motor control and other power electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: PHX6ND50E-VB
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 7A
- **Technology**: Plannar technology
- **Model**: PHX6ND50E-VB
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 7A
- **Technology**: Plannar technology
Domain and module applications：
Applications and modules
PHX6ND50E-VB MOSFET is suitable for a variety of fields and modules, including:
1. **High-voltage power conversion**: Due to its high voltage withstand capability of up to 650V, PHX6ND50E-VB is very suitable for high-voltage power management systems such as switching power supplies and DC-DC converters, which can achieve efficient energy conversion and stable power output.
2. **Motor control**: In industrial and household motor control applications, this MOSFET can be used as a power switch to reliably drive the motor. It is suitable for AC and DC motor control circuits to provide efficient power management.
3. **LED driver**: PHX6ND50E-VB can be used for power management in LED lighting applications. It provides constant current control as a switching element to ensure that the LED operates under optimal working conditions, thereby extending the service life and improving energy efficiency.
4. **Battery charger**: In battery chargers and battery management systems, this MOSFET can be used as a switching element to efficiently control the flow of current to achieve safe charging and efficient discharge.
5. **High frequency applications**: This MOSFET performs well in high frequency switching applications and is suitable for use in high frequency audio amplifiers and other high frequency signal processing circuits.
In summary, the PHX6ND50E-VB MOSFET has a wide range of applicability in high voltage and high power applications, especially in electronic systems that require high efficiency and stability.
PHX6ND50E-VB MOSFET is suitable for a variety of fields and modules, including:
1. **High-voltage power conversion**: Due to its high voltage withstand capability of up to 650V, PHX6ND50E-VB is very suitable for high-voltage power management systems such as switching power supplies and DC-DC converters, which can achieve efficient energy conversion and stable power output.
2. **Motor control**: In industrial and household motor control applications, this MOSFET can be used as a power switch to reliably drive the motor. It is suitable for AC and DC motor control circuits to provide efficient power management.
3. **LED driver**: PHX6ND50E-VB can be used for power management in LED lighting applications. It provides constant current control as a switching element to ensure that the LED operates under optimal working conditions, thereby extending the service life and improving energy efficiency.
4. **Battery charger**: In battery chargers and battery management systems, this MOSFET can be used as a switching element to efficiently control the flow of current to achieve safe charging and efficient discharge.
5. **High frequency applications**: This MOSFET performs well in high frequency switching applications and is suitable for use in high frequency audio amplifiers and other high frequency signal processing circuits.
In summary, the PHX6ND50E-VB MOSFET has a wide range of applicability in high voltage and high power applications, especially in electronic systems that require high efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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