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PHX6N60E-VB Product details
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PHX6N60E-VB MOSFET Product Introduction
PHX6N60E-VB is a high-voltage single N-channel power MOSFET in a TO-220F package, designed for high voltage and medium current applications. The device has a maximum drain-source voltage (V_DS) of up to 650V, which can meet the needs of a variety of high-voltage power management and control systems. Its rated continuous drain current (I_D) is 7A, combined with its threshold voltage (V_th) of 3.5V, it is suitable for use in fast switching and high-frequency operations. The on-resistance (R_DS(ON)) of the PHX6N60E-VB is 1100mΩ@V_GS=10V, which, although relatively high, provides stable performance in a high-voltage environment of 650V. Based on Plannar technology, this model of MOSFET has good thermal stability and voltage resistance, making it a reliable high-voltage switch choice.
PHX6N60E-VB is a high-voltage single N-channel power MOSFET in a TO-220F package, designed for high voltage and medium current applications. The device has a maximum drain-source voltage (V_DS) of up to 650V, which can meet the needs of a variety of high-voltage power management and control systems. Its rated continuous drain current (I_D) is 7A, combined with its threshold voltage (V_th) of 3.5V, it is suitable for use in fast switching and high-frequency operations. The on-resistance (R_DS(ON)) of the PHX6N60E-VB is 1100mΩ@V_GS=10V, which, although relatively high, provides stable performance in a high-voltage environment of 650V. Based on Plannar technology, this model of MOSFET has good thermal stability and voltage resistance, making it a reliable high-voltage switch choice.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
PHX6N60E-VB Detailed parameter description
- **Package**: TO-220F, with good heat dissipation capability, suitable for use in high-power applications.
- **Configuration**: Single N-channel design, providing excellent switching characteristics and linear response.
- **Drain-source voltage (V_DS)**: 650V, suitable for high-voltage power conversion and control.
- **Gate-source voltage (V_GS)**: ±30V, providing a large gate drive range to ensure device stability.
- **Threshold voltage (V_th)**: 3.5V, suitable for fast switching and high-frequency operation.
- **On-resistance (R_DS(ON))**: 1100mΩ@V_GS=10V, with reasonable on-resistance, suitable for applications under high voltage.
- **Drain current (I_D)**: 7A, meeting the application requirements of medium current.
- **Technology**: Plannar technology enhances the device's voltage resistance and thermal stability, ensuring reliability under high load.
- **Package**: TO-220F, with good heat dissipation capability, suitable for use in high-power applications.
- **Configuration**: Single N-channel design, providing excellent switching characteristics and linear response.
- **Drain-source voltage (V_DS)**: 650V, suitable for high-voltage power conversion and control.
- **Gate-source voltage (V_GS)**: ±30V, providing a large gate drive range to ensure device stability.
- **Threshold voltage (V_th)**: 3.5V, suitable for fast switching and high-frequency operation.
- **On-resistance (R_DS(ON))**: 1100mΩ@V_GS=10V, with reasonable on-resistance, suitable for applications under high voltage.
- **Drain current (I_D)**: 7A, meeting the application requirements of medium current.
- **Technology**: Plannar technology enhances the device's voltage resistance and thermal stability, ensuring reliability under high load.
Domain and module applications：
Application fields and module examples
1. **Power supply and power converter**: The high voltage withstand characteristics of PHX6N60E-VB make it very suitable for switching power supplies (SMPS) and various power converters. It can work safely and stably in high voltage environments and meet the power supply needs of electronic equipment.
2. **Industrial drive control**: This MOSFET can be used in motor drive modules of industrial automation equipment. It has excellent voltage resistance and medium current carrying capacity to ensure stable operation under high load conditions.
3. **LED lighting drive**: In high-voltage LED lighting systems, PHX6N60E-VB can be used for switch control, providing efficient driving capabilities, helping to improve the energy efficiency of lighting equipment and reduce power consumption.
4. **Electric vehicle charging module**: Due to its high voltage tolerance, this model of MOSFET is suitable for use in electric vehicle charging modules to ensure the safety and efficiency of the charging process and provide a reliable power management solution for modern electric vehicles.
1. **Power supply and power converter**: The high voltage withstand characteristics of PHX6N60E-VB make it very suitable for switching power supplies (SMPS) and various power converters. It can work safely and stably in high voltage environments and meet the power supply needs of electronic equipment.
2. **Industrial drive control**: This MOSFET can be used in motor drive modules of industrial automation equipment. It has excellent voltage resistance and medium current carrying capacity to ensure stable operation under high load conditions.
3. **LED lighting drive**: In high-voltage LED lighting systems, PHX6N60E-VB can be used for switch control, providing efficient driving capabilities, helping to improve the energy efficiency of lighting equipment and reduce power consumption.
4. **Electric vehicle charging module**: Due to its high voltage tolerance, this model of MOSFET is suitable for use in electric vehicle charging modules to ensure the safety and efficiency of the charging process and provide a reliable power management solution for modern electric vehicles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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