PHX5N50E-VB Product details
Product introduction:
PHX5N50E-VB is a high-voltage N-Channel MOSFET in a TO220F package, designed for applications requiring high voltage and medium current. Its rated drain-to-source voltage (VDS) is up to 650V, making it suitable for a variety of power conversion and switching applications. The on-resistance of this MOSFET is 680mΩ (at VGS=10V), which keeps conduction losses low during operation, thereby improving overall system efficiency. The threshold voltage (Vth) is 3.5V, ensuring reliable switching performance at lower gate voltages. PHX5N50E-VB uses planar technology (Plannar), which enhances its thermal performance and reliability, and is widely used in industrial and consumer electronics.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Model**: PHX5N50E-VB
- **Package**: TO220F
- **Configuration**: Single N channel
- **Drain to source voltage (VDS)**: 650V
- **Gate to source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 680mΩ @ VGS=10V
- **Maximum drain current (ID)**: 12A
- **Technology**: Plannar technology
Domain and module applications:
1. **Switching Power Supply (SMPS)**: PHX5N50E-VB is commonly used in switching power supply design, which can provide stable energy conversion under high voltage environment. Its low on-resistance and high VDS enable this MOSFET to effectively reduce energy loss and improve conversion efficiency.
2. **Motor Driver**: In motor control applications, this MOSFET can be used to drive DC motors and stepper motors, ensuring reliable operation under high voltage and high current conditions, meeting the requirements for precise control and fast response.
3. **Power Converter**: PHX5N50E-VB is suitable for various power conversion modules such as inverters and rectifiers. Its high withstand voltage characteristics enable it to cope with complex power electronics applications, ensuring the stability and reliability of the system.
4. **Battery Management System**: In battery management systems, this MOSFET can be used to control the charging and discharging process, improving the efficiency and safety of battery use. It performs well in battery protection and energy monitoring, preventing overcurrent and short circuit.
Through its excellent performance and wide application, PHX5N50E-VB has become a valuable choice for design engineers in high voltage power supply and control systems, meeting the needs of modern electronic products for high efficiency and high reliability.
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