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PHX45NQ11T-VB Product details
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Product Introduction
PHX45NQ11T-VB is a high-performance N-channel MOSFET in TO220F package, designed for high-power applications. With a maximum drain-source voltage of 100V and a maximum leakage current capability of up to 90A, it is suitable for use in demanding power management and control systems. PHX45NQ11T-VB uses advanced Trench technology to ensure that it operates at low on-resistance to provide excellent power efficiency and thermal management capabilities. This MOSFET is particularly suitable for high-efficiency switching power supplies, motor drives and other power electronic devices.
PHX45NQ11T-VB is a high-performance N-channel MOSFET in TO220F package, designed for high-power applications. With a maximum drain-source voltage of 100V and a maximum leakage current capability of up to 90A, it is suitable for use in demanding power management and control systems. PHX45NQ11T-VB uses advanced Trench technology to ensure that it operates at low on-resistance to provide excellent power efficiency and thermal management capabilities. This MOSFET is particularly suitable for high-efficiency switching power supplies, motor drives and other power electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 2.5V | 90A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 2.5V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 2.5V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: PHX45NQ11T-VB
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 9mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 90A
- **Technology**: Trench technology
- **Model**: PHX45NQ11T-VB
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 9mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 90A
- **Technology**: Trench technology
Domain and module applications：
Application fields and modules
PHX45NQ11T-VB MOSFET is suitable for multiple fields and modules, including:
1. **High-efficiency switching power supply**: Due to its ultra-low on-resistance and high current capability, PHX45NQ11T-VB is very suitable for use as a switching element in high-frequency switching power supplies, which can significantly improve energy conversion efficiency and reduce heat loss.
2. **Motor drive**: In motor control applications, this MOSFET can effectively drive brushless DC motors (BLDC) and stepper motors, provide reliable power support for motors, and achieve efficient power conversion.
3. **Battery management system**: PHX45NQ11T-VB can be used for battery charge and discharge management, as a switching element to control current flow to improve charging and discharging efficiency and extend battery life.
4. **LED lighting**: In LED driver power supply, PHX45NQ11T-VB can be used as a constant current control switch to ensure stable operation of LED and improve light efficiency, which is suitable for high brightness and high efficiency LED lighting system.
5. **Audio power amplifier**: In high fidelity audio amplifier, PHX45NQ11T-VB can be used as an output stage switch to provide low distortion, high linearity audio signal output, ensuring audio quality and auditory experience.
In summary, PHX45NQ11T-VB MOSFET shows excellent performance in modern electronic applications, especially suitable for use in environments requiring high efficiency and low heat loss.
PHX45NQ11T-VB MOSFET is suitable for multiple fields and modules, including:
1. **High-efficiency switching power supply**: Due to its ultra-low on-resistance and high current capability, PHX45NQ11T-VB is very suitable for use as a switching element in high-frequency switching power supplies, which can significantly improve energy conversion efficiency and reduce heat loss.
2. **Motor drive**: In motor control applications, this MOSFET can effectively drive brushless DC motors (BLDC) and stepper motors, provide reliable power support for motors, and achieve efficient power conversion.
3. **Battery management system**: PHX45NQ11T-VB can be used for battery charge and discharge management, as a switching element to control current flow to improve charging and discharging efficiency and extend battery life.
4. **LED lighting**: In LED driver power supply, PHX45NQ11T-VB can be used as a constant current control switch to ensure stable operation of LED and improve light efficiency, which is suitable for high brightness and high efficiency LED lighting system.
5. **Audio power amplifier**: In high fidelity audio amplifier, PHX45NQ11T-VB can be used as an output stage switch to provide low distortion, high linearity audio signal output, ensuring audio quality and auditory experience.
In summary, PHX45NQ11T-VB MOSFET shows excellent performance in modern electronic applications, especially suitable for use in environments requiring high efficiency and low heat loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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