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PHX3N50E-VB Product details
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PHX3N50E-VB MOSFET Product Introduction
PHX3N50E-VB is a high voltage single N-channel power MOSFET in a TO-220F package designed for high voltage applications. Its maximum drain-source voltage (V_DS) can reach 650V, making it suitable for power management systems that require high voltage resistance. The device has a continuous drain current (I_D) of 4A, combined with its higher threshold voltage (V_th) of 3.5V, making it suitable for operation in a variety of power conversion and drive applications. Although its on-resistance (R_DS(ON)) is 2560mΩ@V_GS=10V, which is relatively high, the device is designed to ensure stable operation in high voltage environments. Based on Plannar technology, the PHX3N50E-VB provides reliable performance and good thermal stability, and is able to perform well in a variety of industrial and consumer electronics applications.
PHX3N50E-VB is a high voltage single N-channel power MOSFET in a TO-220F package designed for high voltage applications. Its maximum drain-source voltage (V_DS) can reach 650V, making it suitable for power management systems that require high voltage resistance. The device has a continuous drain current (I_D) of 4A, combined with its higher threshold voltage (V_th) of 3.5V, making it suitable for operation in a variety of power conversion and drive applications. Although its on-resistance (R_DS(ON)) is 2560mΩ@V_GS=10V, which is relatively high, the device is designed to ensure stable operation in high voltage environments. Based on Plannar technology, the PHX3N50E-VB provides reliable performance and good thermal stability, and is able to perform well in a variety of industrial and consumer electronics applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
PHX3N50E-VB Detailed parameter description
- **Package**: TO-220F, with good heat dissipation capability, suitable for use in high power applications.
- **Configuration**: Single N-channel design, with excellent switching characteristics and linear response.
- **Drain-source voltage (V_DS)**: 650V, suitable for high voltage power conversion and control.
- **Gate-source voltage (V_GS)**: ±30V, provides a large gate drive range and enhances the stability of the device.
- **Threshold voltage (V_th)**: 3.5V, suitable for fast switching and high frequency operation.
- **On-resistance (R_DS(ON))**: 2560mΩ@V_GS=10V, although the on-resistance is high, it can still provide stable performance under specific high voltage environments.
- **Drain current (I_D)**: 4A, suitable for low to medium current applications.
- **Technology**: Plannar technology enhances the device's voltage resistance and thermal stability.
- **Package**: TO-220F, with good heat dissipation capability, suitable for use in high power applications.
- **Configuration**: Single N-channel design, with excellent switching characteristics and linear response.
- **Drain-source voltage (V_DS)**: 650V, suitable for high voltage power conversion and control.
- **Gate-source voltage (V_GS)**: ±30V, provides a large gate drive range and enhances the stability of the device.
- **Threshold voltage (V_th)**: 3.5V, suitable for fast switching and high frequency operation.
- **On-resistance (R_DS(ON))**: 2560mΩ@V_GS=10V, although the on-resistance is high, it can still provide stable performance under specific high voltage environments.
- **Drain current (I_D)**: 4A, suitable for low to medium current applications.
- **Technology**: Plannar technology enhances the device's voltage resistance and thermal stability.
Domain and module applications：
Application fields and module examples
1. **Power supply and power converter**: The high voltage withstand characteristics of PHX3N50E-VB make it very suitable for high-voltage switching power supplies (SMPS) and various power converters, and can work safely and stably in high-voltage environments.
2. **Electric vehicle charging system**: This MOSFET can be used in the charging module of electric vehicles, with reliable high-voltage switching capabilities to ensure safety and efficiency during the charging process.
3. **Lighting control system**: In high-voltage lighting control systems, PHX3N50E-VB can be used for switch control to help improve the energy efficiency of lighting equipment and reduce power consumption, especially suitable for LED drive circuits.
4. **Industrial equipment and controllers**: Due to its high voltage tolerance, this model of MOSFET is suitable for drive circuits and control systems in industrial automation equipment, providing stable and reliable performance to ensure the normal operation of equipment under high voltage conditions.
1. **Power supply and power converter**: The high voltage withstand characteristics of PHX3N50E-VB make it very suitable for high-voltage switching power supplies (SMPS) and various power converters, and can work safely and stably in high-voltage environments.
2. **Electric vehicle charging system**: This MOSFET can be used in the charging module of electric vehicles, with reliable high-voltage switching capabilities to ensure safety and efficiency during the charging process.
3. **Lighting control system**: In high-voltage lighting control systems, PHX3N50E-VB can be used for switch control to help improve the energy efficiency of lighting equipment and reduce power consumption, especially suitable for LED drive circuits.
4. **Industrial equipment and controllers**: Due to its high voltage tolerance, this model of MOSFET is suitable for drive circuits and control systems in industrial automation equipment, providing stable and reliable performance to ensure the normal operation of equipment under high voltage conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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