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PHX34NQ11T-VB Product details
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PHX34NQ11T-VB Product Introduction
PHX34NQ11T-VB is a high-performance N-Channel MOSFET in a TO220F package suitable for a variety of high-power applications. Its rated drain-to-source voltage (VDS) is 100V, which can effectively meet power management and power conversion applications with medium voltage requirements. With its low on-resistance (RDS(ON) of 34mΩ @ VGS=10V), this MOSFET can provide excellent energy efficiency in high current environments. The device has a threshold voltage (Vth) of 1.8V, which enables it to operate at a lower gate voltage and is suitable for a variety of drive circuits. The design of PHX34NQ11T-VB is based on advanced Trench technology, which improves switching speed and thermal performance, and is suitable for high-frequency and high-efficiency power applications.
PHX34NQ11T-VB is a high-performance N-Channel MOSFET in a TO220F package suitable for a variety of high-power applications. Its rated drain-to-source voltage (VDS) is 100V, which can effectively meet power management and power conversion applications with medium voltage requirements. With its low on-resistance (RDS(ON) of 34mΩ @ VGS=10V), this MOSFET can provide excellent energy efficiency in high current environments. The device has a threshold voltage (Vth) of 1.8V, which enables it to operate at a lower gate voltage and is suitable for a variety of drive circuits. The design of PHX34NQ11T-VB is based on advanced Trench technology, which improves switching speed and thermal performance, and is suitable for high-frequency and high-efficiency power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | 34mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: PHX34NQ11T-VB
- **Package**: TO220F
- **Configuration**: Single N channel
- **Drain to source voltage (VDS)**: 100V
- **Gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 34mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench technology
- **Model**: PHX34NQ11T-VB
- **Package**: TO220F
- **Configuration**: Single N channel
- **Drain to source voltage (VDS)**: 100V
- **Gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 34mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **DC-DC converter**: PHX34NQ11T-VB can be widely used in DC-DC converters, especially in applications where high efficiency and high current are required. Its low RDS(ON) ensures that energy loss during the conversion process is minimized, thereby improving overall system efficiency.
2. **Motor drive**: In motor control modules, this MOSFET can be used to drive DC motors or stepper motors, providing stable current and excellent response time to ensure precise speed and position control.
3. **Battery management system**: PHX34NQ11T-VB is suitable for battery management systems (BMS), providing efficient current control during charging and discharging, protecting batteries from overload and short circuit, and extending battery life.
4. **LED drive circuit**: This MOSFET can be used to drive high-power LEDs in LED lighting modules. It has low conduction losses and fast switching capabilities, allowing the LED system to remain efficient and stable under high-frequency drive.
Through its excellent performance and diverse application scenarios, PHX34NQ11T-VB provides an ideal solution for electronic design engineers, meeting the requirements of modern power supply and control systems for high efficiency and high reliability.
1. **DC-DC converter**: PHX34NQ11T-VB can be widely used in DC-DC converters, especially in applications where high efficiency and high current are required. Its low RDS(ON) ensures that energy loss during the conversion process is minimized, thereby improving overall system efficiency.
2. **Motor drive**: In motor control modules, this MOSFET can be used to drive DC motors or stepper motors, providing stable current and excellent response time to ensure precise speed and position control.
3. **Battery management system**: PHX34NQ11T-VB is suitable for battery management systems (BMS), providing efficient current control during charging and discharging, protecting batteries from overload and short circuit, and extending battery life.
4. **LED drive circuit**: This MOSFET can be used to drive high-power LEDs in LED lighting modules. It has low conduction losses and fast switching capabilities, allowing the LED system to remain efficient and stable under high-frequency drive.
Through its excellent performance and diverse application scenarios, PHX34NQ11T-VB provides an ideal solution for electronic design engineers, meeting the requirements of modern power supply and control systems for high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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