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PHX27NQ11T-VB Product details
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Product Introduction
PHX27NQ11T-VB is a highly efficient N-channel MOSFET packaged in TO220F form, designed to meet the needs of modern electronic devices for high power and low on-resistance. Its maximum drain-source voltage is 100V, and it can withstand a maximum leakage current of 50A, making it suitable for a variety of high-performance power applications. This MOSFET uses advanced Trench technology to provide excellent conductivity and thermal management capabilities to ensure reliability and stability under high load conditions.
PHX27NQ11T-VB is a highly efficient N-channel MOSFET packaged in TO220F form, designed to meet the needs of modern electronic devices for high power and low on-resistance. Its maximum drain-source voltage is 100V, and it can withstand a maximum leakage current of 50A, making it suitable for a variety of high-performance power applications. This MOSFET uses advanced Trench technology to provide excellent conductivity and thermal management capabilities to ensure reliability and stability under high load conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | 34mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: PHX27NQ11T-VB
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 34mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 50A
- **Technology**: Trench technology
- **Model**: PHX27NQ11T-VB
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 34mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 50A
- **Technology**: Trench technology
Domain and module applications：
Application fields and modules
PHX27NQ11T-VB MOSFET is suitable for multiple fields and modules, including:
1. **Power management system**: Due to its low on-resistance and high efficiency, PHX27NQ11T-VB is suitable for use as a high-frequency switching element in switching power supplies and power adapters, thereby improving energy conversion efficiency and reducing heat loss.
2. **Motor drive**: In the field of motor control, PHX27NQ11T-VB can be used as a power switch in the motor drive circuit, suitable for brushless DC motor (BLDC) and stepper motor drive, to achieve efficient power output and precise control.
3. **LED lighting**: In the design of LED drive power supply, this MOSFET can be used as a constant current source control to ensure that the LED provides stable light output in the best working state and improve energy efficiency.
4. **Battery Management System**: PHX27NQ11T-VB can be applied to battery charge and discharge management, and can be used as a switch element to perform efficient current control, thereby improving the efficiency and safety of battery charge and discharge.
5. **Audio Amplifier**: In a high-fidelity audio amplifier, PHX27NQ11T-VB can be used as a switch at the output stage to provide low distortion and high-fidelity audio signal output.
In summary, PHX27NQ11T-VB MOSFET has a wide range of applicability in a variety of modern electronic applications, especially in environments that require high efficiency and low heat loss.
PHX27NQ11T-VB MOSFET is suitable for multiple fields and modules, including:
1. **Power management system**: Due to its low on-resistance and high efficiency, PHX27NQ11T-VB is suitable for use as a high-frequency switching element in switching power supplies and power adapters, thereby improving energy conversion efficiency and reducing heat loss.
2. **Motor drive**: In the field of motor control, PHX27NQ11T-VB can be used as a power switch in the motor drive circuit, suitable for brushless DC motor (BLDC) and stepper motor drive, to achieve efficient power output and precise control.
3. **LED lighting**: In the design of LED drive power supply, this MOSFET can be used as a constant current source control to ensure that the LED provides stable light output in the best working state and improve energy efficiency.
4. **Battery Management System**: PHX27NQ11T-VB can be applied to battery charge and discharge management, and can be used as a switch element to perform efficient current control, thereby improving the efficiency and safety of battery charge and discharge.
5. **Audio Amplifier**: In a high-fidelity audio amplifier, PHX27NQ11T-VB can be used as a switch at the output stage to provide low distortion and high-fidelity audio signal output.
In summary, PHX27NQ11T-VB MOSFET has a wide range of applicability in a variety of modern electronic applications, especially in environments that require high efficiency and low heat loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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