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PHX23NQ10T-VB Product details
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PHX23NQ10T-VB MOSFET Product Introduction
PHX23NQ10T-VB is a high-efficiency single N-channel power MOSFET in TO-220F package, designed for medium and low voltage applications. Its maximum drain-source voltage (V_DS) is 100V, suitable for a variety of power management and electric drive systems. The device has a continuous drain current (I_D) of 50A, which meets high current requirements while having a low on-resistance (R_DS(ON)) of 34mΩ@V_GS=10V, which makes it perform well in high-power applications. The threshold voltage (V_th) is 1.8V, ensuring fast turn-on and turn-off, suitable for high-frequency switching applications, and can effectively reduce switching losses and improve system efficiency.
PHX23NQ10T-VB is a high-efficiency single N-channel power MOSFET in TO-220F package, designed for medium and low voltage applications. Its maximum drain-source voltage (V_DS) is 100V, suitable for a variety of power management and electric drive systems. The device has a continuous drain current (I_D) of 50A, which meets high current requirements while having a low on-resistance (R_DS(ON)) of 34mΩ@V_GS=10V, which makes it perform well in high-power applications. The threshold voltage (V_th) is 1.8V, ensuring fast turn-on and turn-off, suitable for high-frequency switching applications, and can effectively reduce switching losses and improve system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | 34mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
PHX23NQ10T-VB Detailed parameter description
- **Package**: TO-220F, with good heat dissipation performance, suitable for use in high-power applications.
- **Configuration**: Single N-channel design, easy to use and has excellent linear characteristics.
- **Drain-source voltage (V_DS)**: 100V, suitable for low to medium voltage power management applications.
- **Gate-source voltage (V_GS)**: ±20V, providing a larger gate drive range and enhanced stability.
- **Threshold voltage (V_th)**: 1.8V, low threshold voltage facilitates fast switching, suitable for high-frequency applications.
- **On-resistance (R_DS(ON))**: 34mΩ@V_GS=10V, reduces power consumption in the switching state and improves overall efficiency.
- **Drain current (I_D)**: 50A, suitable for applications with higher current requirements.
- **Technology**: Trench technology provides excellent current density and low parasitic resistance, suitable for high-efficiency power conversion.
- **Package**: TO-220F, with good heat dissipation performance, suitable for use in high-power applications.
- **Configuration**: Single N-channel design, easy to use and has excellent linear characteristics.
- **Drain-source voltage (V_DS)**: 100V, suitable for low to medium voltage power management applications.
- **Gate-source voltage (V_GS)**: ±20V, providing a larger gate drive range and enhanced stability.
- **Threshold voltage (V_th)**: 1.8V, low threshold voltage facilitates fast switching, suitable for high-frequency applications.
- **On-resistance (R_DS(ON))**: 34mΩ@V_GS=10V, reduces power consumption in the switching state and improves overall efficiency.
- **Drain current (I_D)**: 50A, suitable for applications with higher current requirements.
- **Technology**: Trench technology provides excellent current density and low parasitic resistance, suitable for high-efficiency power conversion.
Domain and module applications：
Application fields and module examples
1. **Power converter**: The high current capability and low on-resistance of PHX23NQ10T-VB make it very suitable for use in switching power supplies (SMPS) and DC-DC converters, which can effectively improve energy conversion efficiency and reduce heat loss.
2. **Electric vehicle drive system**: This MOSFET can be used in the motor drive module of electric vehicles. It has excellent voltage resistance and high current carrying capacity, and can provide stable performance in high-frequency switching operations.
3. **Battery management system (BMS)**: In battery charge and discharge control, PHX23NQ10T-VB can be used as a switching element to ensure safe and efficient charging of batteries, especially suitable for lithium battery management applications.
4. **Communication equipment power management**: Due to its fast switching characteristics and good thermal management capabilities, this type of MOSFET is suitable for the power module of communication equipment, which can ensure the stable operation of the equipment under high load conditions while reducing energy loss and electromagnetic interference.
1. **Power converter**: The high current capability and low on-resistance of PHX23NQ10T-VB make it very suitable for use in switching power supplies (SMPS) and DC-DC converters, which can effectively improve energy conversion efficiency and reduce heat loss.
2. **Electric vehicle drive system**: This MOSFET can be used in the motor drive module of electric vehicles. It has excellent voltage resistance and high current carrying capacity, and can provide stable performance in high-frequency switching operations.
3. **Battery management system (BMS)**: In battery charge and discharge control, PHX23NQ10T-VB can be used as a switching element to ensure safe and efficient charging of batteries, especially suitable for lithium battery management applications.
4. **Communication equipment power management**: Due to its fast switching characteristics and good thermal management capabilities, this type of MOSFET is suitable for the power module of communication equipment, which can ensure the stable operation of the equipment under high load conditions while reducing energy loss and electromagnetic interference.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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