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PHX1N50E-VB Product details
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PHX1N50E-VB Product Introduction
PHX1N50E-VB is a high voltage N-channel MOSFET in TO220F package with good electrical performance and reliability. Its design is particularly suitable for high voltage applications, with a maximum drain-to-source voltage (VDS) of up to 650V, suitable for use in various power conversion and power management. The device can operate stably over a wide voltage range and is suitable for many fields such as industrial and consumer electronics.
PHX1N50E-VB is a high voltage N-channel MOSFET in TO220F package with good electrical performance and reliability. Its design is particularly suitable for high voltage applications, with a maximum drain-to-source voltage (VDS) of up to 650V, suitable for use in various power conversion and power management. The device can operate stably over a wide voltage range and is suitable for many fields such as industrial and consumer electronics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | 1700mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: PHX1N50E-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain to source voltage (VDS)**: 650V
- **Maximum gate to source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1700mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 2A
- **Technology**: Planar technology (Plannar)
- **Model**: PHX1N50E-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain to source voltage (VDS)**: 650V
- **Maximum gate to source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1700mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 2A
- **Technology**: Planar technology (Plannar)
Domain and module applications：
Applications and module examples
1. **Switching power supply**: PHX1N50E-VB is able to effectively control current and improve energy conversion efficiency in high voltage switching power supplies. Due to its high VDS, it can be used in both input and output sections to ensure safe and stable operation of the system.
2. **Motor drive**: In motor drive applications, PHX1N50E-VB as a switching element can achieve precise control of the motor and improve overall drive efficiency, especially in high voltage motor control systems.
3. **Inverter**: This MOSFET is suitable for power conversion in solar inverters and other renewable energy systems. Its high voltage and good conduction characteristics enable it to handle high voltage input from solar panels.
4. **Lighting control**: In LED lighting and other high voltage lighting applications, PHX1N50E-VB can be used for efficient switching and dimming functions to improve the energy efficiency and service life of the lighting system.
Through these applications, PHX1N50E-VB shows its wide applicability in high voltage and high performance fields.
1. **Switching power supply**: PHX1N50E-VB is able to effectively control current and improve energy conversion efficiency in high voltage switching power supplies. Due to its high VDS, it can be used in both input and output sections to ensure safe and stable operation of the system.
2. **Motor drive**: In motor drive applications, PHX1N50E-VB as a switching element can achieve precise control of the motor and improve overall drive efficiency, especially in high voltage motor control systems.
3. **Inverter**: This MOSFET is suitable for power conversion in solar inverters and other renewable energy systems. Its high voltage and good conduction characteristics enable it to handle high voltage input from solar panels.
4. **Lighting control**: In LED lighting and other high voltage lighting applications, PHX1N50E-VB can be used for efficient switching and dimming functions to improve the energy efficiency and service life of the lighting system.
Through these applications, PHX1N50E-VB shows its wide applicability in high voltage and high performance fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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