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PHW8ND50E-VB Product details
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Product Introduction
**PHW8ND50E-VB** is a high voltage single N-channel MOSFET in TO247 package, designed for high voltage and high power applications. The device has a maximum drain-source voltage (VDS) of 500V and can withstand a leakage current of up to 40A. Its low on-resistance and SJ_Multi-EPI technology enable it to provide excellent performance in power conversion and switching applications, and is widely used in industrial, power and automotive fields.
**PHW8ND50E-VB** is a high voltage single N-channel MOSFET in TO247 package, designed for high voltage and high power applications. The device has a maximum drain-source voltage (VDS) of 500V and can withstand a leakage current of up to 40A. Its low on-resistance and SJ_Multi-EPI technology enable it to provide excellent performance in power conversion and switching applications, and is widely used in industrial, power and automotive fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: PHW8ND50E-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Model**: PHW8ND50E-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **Switching Power Supply**: The high voltage capability and low on-resistance of PHW8ND50E-VB make it very suitable for switching power supply (SMPS), which can effectively convert electric energy under high voltage conditions and is widely used in power adapters, industrial power supplies and chargers.
2. **Power Conversion**: In power conversion modules, this MOSFET can be used in inverters and rectifiers to provide efficient current control and ensure stable operation under high power loads. It is suitable for solar inverters and wind power generation systems.
3. **Automotive Electronics**: PHW8ND50E-VB also has important applications in automotive electronics, especially in the power management system of electric and hybrid vehicles, which can effectively control the working state of high-voltage batteries and motors and improve the energy efficiency of the whole vehicle.
4. **Industrial Automation**: In industrial automation systems, this MOSFET can be used to drive large motors and control high-voltage equipment, improve the efficiency and response speed of the system, and ensure reliable operation in complex working environments.
Through the above application examples, the wide applicability of PHW8ND50E-VB MOSFET in high voltage and high power applications makes it an indispensable component in modern electronic design.
1. **Switching Power Supply**: The high voltage capability and low on-resistance of PHW8ND50E-VB make it very suitable for switching power supply (SMPS), which can effectively convert electric energy under high voltage conditions and is widely used in power adapters, industrial power supplies and chargers.
2. **Power Conversion**: In power conversion modules, this MOSFET can be used in inverters and rectifiers to provide efficient current control and ensure stable operation under high power loads. It is suitable for solar inverters and wind power generation systems.
3. **Automotive Electronics**: PHW8ND50E-VB also has important applications in automotive electronics, especially in the power management system of electric and hybrid vehicles, which can effectively control the working state of high-voltage batteries and motors and improve the energy efficiency of the whole vehicle.
4. **Industrial Automation**: In industrial automation systems, this MOSFET can be used to drive large motors and control high-voltage equipment, improve the efficiency and response speed of the system, and ensure reliable operation in complex working environments.
Through the above application examples, the wide applicability of PHW8ND50E-VB MOSFET in high voltage and high power applications makes it an indispensable component in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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