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PHW8N50E-VB Product details
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Product Introduction
**PHW8N50E-VB** is a high voltage single N-channel MOSFET in TO247 package, designed for high voltage and high current applications. With a drain-source voltage of up to 500V and a maximum drain current of 40A, it is suitable for high voltage power management and switching applications. The on-resistance of this MOSFET is 80mΩ at VGS=10V, ensuring superior conductivity and thermal management capabilities under high load conditions, and is suitable for multiple fields such as industrial and consumer electronics.
**PHW8N50E-VB** is a high voltage single N-channel MOSFET in TO247 package, designed for high voltage and high current applications. With a drain-source voltage of up to 500V and a maximum drain current of 40A, it is suitable for high voltage power management and switching applications. The on-resistance of this MOSFET is 80mΩ at VGS=10V, ensuring superior conductivity and thermal management capabilities under high load conditions, and is suitable for multiple fields such as industrial and consumer electronics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: PHW8N50E-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 500V
- **VGS (gate-source voltage)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**:
- 80mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Model**: PHW8N50E-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 500V
- **VGS (gate-source voltage)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**:
- 80mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
1. **High-voltage power management**: PHW8N50E-VB is widely used in high-voltage switching power supplies (SMPS) and DC-DC converters. With its 500V drain-source voltage, it can meet the efficient energy management needs of industrial and consumer electronic devices.
2. **Motor control**: In motor drive systems, this MOSFET can support high-voltage and high-current switching operations, suitable for electric vehicles and industrial automation equipment, and improve the efficiency and reliability of motor drives.
3. **Inverter**: Due to its high drain-source voltage of 500V, PHW8N50E-VB is very suitable for supporting efficient energy conversion in solar inverters and other power conversion equipment.
4. **Welding equipment**: In welding equipment, this MOSFET can be used to control high-energy pulses to achieve efficient welding, suitable for industrial manufacturing and maintenance fields.
5. **Battery Management System**: In the battery management and charging system, PHW8N50E-VB can effectively manage the battery charging and discharging process, improve the safety and performance of the battery, and is suitable for electric vehicles and energy storage systems.
With its excellent performance and wide application prospects, PHW8N50E-VB occupies an important position in modern electronic devices and is an ideal choice for high-voltage applications.
1. **High-voltage power management**: PHW8N50E-VB is widely used in high-voltage switching power supplies (SMPS) and DC-DC converters. With its 500V drain-source voltage, it can meet the efficient energy management needs of industrial and consumer electronic devices.
2. **Motor control**: In motor drive systems, this MOSFET can support high-voltage and high-current switching operations, suitable for electric vehicles and industrial automation equipment, and improve the efficiency and reliability of motor drives.
3. **Inverter**: Due to its high drain-source voltage of 500V, PHW8N50E-VB is very suitable for supporting efficient energy conversion in solar inverters and other power conversion equipment.
4. **Welding equipment**: In welding equipment, this MOSFET can be used to control high-energy pulses to achieve efficient welding, suitable for industrial manufacturing and maintenance fields.
5. **Battery Management System**: In the battery management and charging system, PHW8N50E-VB can effectively manage the battery charging and discharging process, improve the safety and performance of the battery, and is suitable for electric vehicles and energy storage systems.
With its excellent performance and wide application prospects, PHW8N50E-VB occupies an important position in modern electronic devices and is an ideal choice for high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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