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PHW20N50E-VB Product details
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Product Introduction
PHW20N50E-VB is a high-performance N-channel MOSFET in TO247 package, designed for high voltage and high current applications. With a drain-source voltage (VDS) of 500V and a drain current (ID) of 40A, the device is very suitable for use in industrial and consumer electronics with strict requirements on power efficiency and thermal management. The SJ_Multi-EPI technology it adopts ensures low on-resistance and excellent switching characteristics, making it perform well in high-frequency and high-load environments.
PHW20N50E-VB is a high-performance N-channel MOSFET in TO247 package, designed for high voltage and high current applications. With a drain-source voltage (VDS) of 500V and a drain current (ID) of 40A, the device is very suitable for use in industrial and consumer electronics with strict requirements on power efficiency and thermal management. The SJ_Multi-EPI technology it adopts ensures low on-resistance and excellent switching characteristics, making it perform well in high-frequency and high-load environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: PHW20N50E-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 500V
- **VGS (gate-source voltage)**: ±30V
- **Vth (gate threshold voltage)**: 3.8V
- **RDS(ON)**:
- 80mΩ @ VGS = 10V
- **ID (drain current)**: 40A
- **Technology**: SJ_Multi-EPI technology
- **Model**: PHW20N50E-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 500V
- **VGS (gate-source voltage)**: ±30V
- **Vth (gate threshold voltage)**: 3.8V
- **RDS(ON)**:
- 80mΩ @ VGS = 10V
- **ID (drain current)**: 40A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications：
Application fields and modules
PHW20N50E-VB is widely used in multiple fields and modules, including:
1. **Switching power supply**: This MOSFET is very suitable for high-efficiency switching power supply and DC-DC converter, and can achieve efficient power conversion at a high voltage of 500V, and is widely used in industrial power supply and power management systems.
2. **Motor drive**: In high-power motor control systems, PHW20N50E-VB can be used as a motor driver, suitable for power tools, electric vehicles and industrial automation equipment, providing stable current and fast response capabilities.
3. **Battery management system**: In battery management and charging systems, PHW20N50E-VB can be used as a switching element to ensure safe charging and discharging of batteries, and is widely used in electric vehicles and energy storage systems to optimize battery performance and extend service life.
4. **High frequency applications**: Due to its excellent switching performance, this MOSFET is suitable for high-frequency inverters and RF applications, which can improve the overall efficiency of the system and is widely used in renewable energy and communication equipment.
5. **Consumer Electronics**: PHW20N50E-VB is suitable for high-power consumer electronics such as large household appliances and lighting control systems, ensuring stability and energy efficiency under high load conditions.
Through its excellent performance and wide range of applications, PHW20N50E-VB provides strong support for modern power electronics design to meet the needs of high voltage and high current.
PHW20N50E-VB is widely used in multiple fields and modules, including:
1. **Switching power supply**: This MOSFET is very suitable for high-efficiency switching power supply and DC-DC converter, and can achieve efficient power conversion at a high voltage of 500V, and is widely used in industrial power supply and power management systems.
2. **Motor drive**: In high-power motor control systems, PHW20N50E-VB can be used as a motor driver, suitable for power tools, electric vehicles and industrial automation equipment, providing stable current and fast response capabilities.
3. **Battery management system**: In battery management and charging systems, PHW20N50E-VB can be used as a switching element to ensure safe charging and discharging of batteries, and is widely used in electric vehicles and energy storage systems to optimize battery performance and extend service life.
4. **High frequency applications**: Due to its excellent switching performance, this MOSFET is suitable for high-frequency inverters and RF applications, which can improve the overall efficiency of the system and is widely used in renewable energy and communication equipment.
5. **Consumer Electronics**: PHW20N50E-VB is suitable for high-power consumer electronics such as large household appliances and lighting control systems, ensuring stability and energy efficiency under high load conditions.
Through its excellent performance and wide range of applications, PHW20N50E-VB provides strong support for modern power electronics design to meet the needs of high voltage and high current.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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