中文
English
PHW11N50E-VB Product details
Back to previous pageProduct introduction：
PHW11N50E-VB Product Introduction
PHW11N50E-VB is a high voltage N-Channel MOSFET in TO247 package, designed for high voltage and high current applications. This MOSFET adopts advanced SJ_Multi-EPI technology, providing excellent conductivity and thermal management capabilities, suitable for operation in harsh electrical environments. The high withstand voltage and low on-resistance of PHW11N50E-VB make it an important component in power management, industrial control and electric vehicles.
PHW11N50E-VB is a high voltage N-Channel MOSFET in TO247 package, designed for high voltage and high current applications. This MOSFET adopts advanced SJ_Multi-EPI technology, providing excellent conductivity and thermal management capabilities, suitable for operation in harsh electrical environments. The high withstand voltage and low on-resistance of PHW11N50E-VB make it an important component in power management, industrial control and electric vehicles.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: PHW11N50E-VB
- **Package**: TO247
- **Configuration**: Single N-Channel
- **Drain-Source Voltage (VDS)**: 500V
- **Gate-Source Voltage (VGS)**: ±30V
- **Threshold Voltage (Vth)**: 3.8V
- **On-Resistance (RDS(ON))**:
- 80mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Model**: PHW11N50E-VB
- **Package**: TO247
- **Configuration**: Single N-Channel
- **Drain-Source Voltage (VDS)**: 500V
- **Gate-Source Voltage (VGS)**: ±30V
- **Threshold Voltage (Vth)**: 3.8V
- **On-Resistance (RDS(ON))**:
- 80mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
1. **Power management**:
- PHW11N50E-VB is widely used in switching power supplies (SMPS) and high-voltage DC-DC converters. Its high withstand voltage and low on-resistance enable it to provide high efficiency and low energy loss in power supply design.
2. **Industrial control**:
- This MOSFET is suitable for various industrial automation and control systems, and can be used for motor drive, load switch and high-voltage switching circuit to ensure the stability and reliability of the system.
3. **Electric vehicle**:
- In the power system of electric vehicles, PHW11N50E-VB can be used for high-voltage motor drive and energy management, and can withstand high voltage and current to improve the overall performance and safety of electric vehicles.
4. **Inverter application**:
- This MOSFET is a common choice in solar inverters and wind inverters, which can effectively control high-voltage DC power and convert it into usable AC power to promote the use of renewable energy.
5. **Lighting System**:
- PHW11N50E-VB is suitable for high-power LED driving and lighting control, and can provide stable current to ensure high brightness and long life LED lighting products.
PHW11N50E-VB's excellent performance and wide applicability make it an indispensable key component in modern electrical engineering and design, and can meet the needs of various high-efficiency applications.
1. **Power management**:
- PHW11N50E-VB is widely used in switching power supplies (SMPS) and high-voltage DC-DC converters. Its high withstand voltage and low on-resistance enable it to provide high efficiency and low energy loss in power supply design.
2. **Industrial control**:
- This MOSFET is suitable for various industrial automation and control systems, and can be used for motor drive, load switch and high-voltage switching circuit to ensure the stability and reliability of the system.
3. **Electric vehicle**:
- In the power system of electric vehicles, PHW11N50E-VB can be used for high-voltage motor drive and energy management, and can withstand high voltage and current to improve the overall performance and safety of electric vehicles.
4. **Inverter application**:
- This MOSFET is a common choice in solar inverters and wind inverters, which can effectively control high-voltage DC power and convert it into usable AC power to promote the use of renewable energy.
5. **Lighting System**:
- PHW11N50E-VB is suitable for high-power LED driving and lighting control, and can provide stable current to ensure high brightness and long life LED lighting products.
PHW11N50E-VB's excellent performance and wide applicability make it an indispensable key component in modern electrical engineering and design, and can meet the needs of various high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
