中文
English
PHU11NQ10T-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**PHU11NQ10T-VB** is a high-performance single N-channel MOSFET in TO251 package, designed for medium voltage and current applications. With a drain-source voltage of up to 100V and a maximum drain current of 15A, it is suitable for a variety of power management and switching applications. With an on-resistance of 110mΩ at VGS=10V, this MOSFET provides excellent conductivity and thermal management capabilities, enabling superior energy efficiency under high load conditions.
**PHU11NQ10T-VB** is a high-performance single N-channel MOSFET in TO251 package, designed for medium voltage and current applications. With a drain-source voltage of up to 100V and a maximum drain current of 15A, it is suitable for a variety of power management and switching applications. With an on-resistance of 110mΩ at VGS=10V, this MOSFET provides excellent conductivity and thermal management capabilities, enabling superior energy efficiency under high load conditions.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 15A | 110mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: PHU11NQ10T-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 100V
- **VGS (gate-source voltage)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 110mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 15A
- **Technology**: Trench
- **Model**: PHU11NQ10T-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 100V
- **VGS (gate-source voltage)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 110mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 15A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Power management**: PHU11NQ10T-VB is widely used in DC-DC converters and switching power supplies (SMPS). With its 100V drain-source voltage and low on-resistance, it can effectively improve energy efficiency and is suitable for industrial and consumer electronic devices.
2. **Motor control**: In motor drive and control systems, this MOSFET can provide stable current and fast switching, suitable for electric vehicles, home appliances and automation equipment to improve driving performance.
3. **Inverter**: Due to its high voltage and high current handling capabilities, PHU11NQ10T-VB is very suitable for solar inverters and other power conversion equipment to achieve efficient energy conversion.
4. **LED driver**: In LED drive circuits, this MOSFET can provide precise current control and is suitable for commercial and residential lighting systems to achieve high-efficiency and long-life LED lighting solutions.
5. **Battery Management System**: In the battery management and charging system, PHU11NQ10T-VB can efficiently manage the charging and discharging process, improve the safety and performance of the battery, and is suitable for electric vehicles and energy storage systems.
With its excellent performance and wide applicability, PHU11NQ10T-VB plays an important role in modern electronic products and is an ideal choice for efficient power management and switching applications.
1. **Power management**: PHU11NQ10T-VB is widely used in DC-DC converters and switching power supplies (SMPS). With its 100V drain-source voltage and low on-resistance, it can effectively improve energy efficiency and is suitable for industrial and consumer electronic devices.
2. **Motor control**: In motor drive and control systems, this MOSFET can provide stable current and fast switching, suitable for electric vehicles, home appliances and automation equipment to improve driving performance.
3. **Inverter**: Due to its high voltage and high current handling capabilities, PHU11NQ10T-VB is very suitable for solar inverters and other power conversion equipment to achieve efficient energy conversion.
4. **LED driver**: In LED drive circuits, this MOSFET can provide precise current control and is suitable for commercial and residential lighting systems to achieve high-efficiency and long-life LED lighting solutions.
5. **Battery Management System**: In the battery management and charging system, PHU11NQ10T-VB can efficiently manage the charging and discharging process, improve the safety and performance of the battery, and is suitable for electric vehicles and energy storage systems.
With its excellent performance and wide applicability, PHU11NQ10T-VB plays an important role in modern electronic products and is an ideal choice for efficient power management and switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
