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PHT6NQ10T-VB Product details
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PHT6NQ10T-VB Product Introduction
PHT6NQ10T-VB is a high-performance N-channel MOSFET in a compact SOT223 package, designed for medium power and high voltage applications. With a drain-source voltage (VDS) of 100V, the device is capable of handling up to 5A of drain current, making it ideal for applications requiring high voltage and low conduction losses. PHT6NQ10T-VB exhibits low on-resistance at low gate-source voltage, with RDS(ON) of 120mΩ at VGS=4.5V and 100mΩ at VGS=10V, ensuring high performance and stability in a wide range of applications.
PHT6NQ10T-VB is a high-performance N-channel MOSFET in a compact SOT223 package, designed for medium power and high voltage applications. With a drain-source voltage (VDS) of 100V, the device is capable of handling up to 5A of drain current, making it ideal for applications requiring high voltage and low conduction losses. PHT6NQ10T-VB exhibits low on-resistance at low gate-source voltage, with RDS(ON) of 120mΩ at VGS=4.5V and 100mΩ at VGS=10V, ensuring high performance and stability in a wide range of applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Detailed parameter description
- **Model**: PHT6NQ10T-VB
- **Package**: SOT223
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 120mΩ @ VGS=4.5V
- 100mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 5A
- **Technology**: Trench
- **Model**: PHT6NQ10T-VB
- **Package**: SOT223
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 120mΩ @ VGS=4.5V
- 100mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 5A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power management**: PHT6NQ10T-VB is widely used in DC-DC converters and switching power supplies. It can effectively control the conversion of electric energy and is suitable for various power adapters and chargers, providing high efficiency and reliability.
2. **Motor drive**: This MOSFET is suitable for small motors and drive circuits. It can handle currents up to 5A, ensuring the smooth operation of motors under different load conditions. It is widely used in power tools and consumer electronics.
3. **LED drive**: In LED lighting systems, PHT6NQ10T-VB can effectively control the current of LEDs, provide the required brightness and stability, and is suitable for various indoor and outdoor lighting solutions.
4. **Signal switch**: This device can also be used in signal switches and switch control circuits, ensuring the reliability and efficiency of the circuit with its low on-resistance and high withstand voltage characteristics.
Through these application examples, it can be seen that PHT6NQ10T-VB has a wide range of applicability in medium-power, high-voltage electronic designs and is an ideal choice for a variety of critical systems.
1. **Power management**: PHT6NQ10T-VB is widely used in DC-DC converters and switching power supplies. It can effectively control the conversion of electric energy and is suitable for various power adapters and chargers, providing high efficiency and reliability.
2. **Motor drive**: This MOSFET is suitable for small motors and drive circuits. It can handle currents up to 5A, ensuring the smooth operation of motors under different load conditions. It is widely used in power tools and consumer electronics.
3. **LED drive**: In LED lighting systems, PHT6NQ10T-VB can effectively control the current of LEDs, provide the required brightness and stability, and is suitable for various indoor and outdoor lighting solutions.
4. **Signal switch**: This device can also be used in signal switches and switch control circuits, ensuring the reliability and efficiency of the circuit with its low on-resistance and high withstand voltage characteristics.
Through these application examples, it can be seen that PHT6NQ10T-VB has a wide range of applicability in medium-power, high-voltage electronic designs and is an ideal choice for a variety of critical systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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