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PHT6N03T-VB Product details
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Product Introduction
PHT6N03T-VB is a high-performance N-channel MOSFET in SOT223 package, designed for low voltage and medium current applications. Its excellent on-resistance and fast switching characteristics make it very suitable for a variety of high-efficiency power management and switching applications. PHT6N03T-VB combines excellent current handling capability with a small package, making it an ideal choice for high-efficiency and compact design in modern electronic products.
PHT6N03T-VB is a high-performance N-channel MOSFET in SOT223 package, designed for low voltage and medium current applications. Its excellent on-resistance and fast switching characteristics make it very suitable for a variety of high-efficiency power management and switching applications. PHT6N03T-VB combines excellent current handling capability with a small package, making it an ideal choice for high-efficiency and compact design in modern electronic products.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | 19mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Detailed parameter description
- **Model**: PHT6N03T-VB
- **Package**: SOT223
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 21mΩ (@VGS=4.5V)
- 19mΩ (@VGS=10V)
- **Maximum drain current (ID)**: 7A
- **Technology**: Trench technology
- **Model**: PHT6N03T-VB
- **Package**: SOT223
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 21mΩ (@VGS=4.5V)
- 19mΩ (@VGS=10V)
- **Maximum drain current (ID)**: 7A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules
1. **Power management**: PHT6N03T-VB performs well in switching power supply (SMPS) design. Its low on-resistance effectively reduces energy loss and improves the overall efficiency of the system. It is widely used in power adapters and various power modules.
2. **Portable electronic devices**: Due to its miniaturized SOT223 package, PHT6N03T-VB is very suitable for portable devices such as smartphones, tablets, etc., which can effectively control power and signal switching and optimize the power consumption of the device.
3. **LED driver**: This MOSFET performs well in LED driver circuits. Its fast switching characteristics and low on-resistance make it an ideal choice for efficient LED lighting solutions and suitable for various commercial and home lighting systems.
4. **Power tools**: In power tools, PHT6N03T-VB can also be used in power management circuits, which can stably control current and maintain good performance under high load conditions, suitable for various electric equipment.
With its excellent performance and wide application potential, PHT6N03T-VB provides an efficient and reliable solution for modern electronic design.
1. **Power management**: PHT6N03T-VB performs well in switching power supply (SMPS) design. Its low on-resistance effectively reduces energy loss and improves the overall efficiency of the system. It is widely used in power adapters and various power modules.
2. **Portable electronic devices**: Due to its miniaturized SOT223 package, PHT6N03T-VB is very suitable for portable devices such as smartphones, tablets, etc., which can effectively control power and signal switching and optimize the power consumption of the device.
3. **LED driver**: This MOSFET performs well in LED driver circuits. Its fast switching characteristics and low on-resistance make it an ideal choice for efficient LED lighting solutions and suitable for various commercial and home lighting systems.
4. **Power tools**: In power tools, PHT6N03T-VB can also be used in power management circuits, which can stably control current and maintain good performance under high load conditions, suitable for various electric equipment.
With its excellent performance and wide application potential, PHT6N03T-VB provides an efficient and reliable solution for modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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