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PHT1N60R-VB Product details
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PHT1N60R-VB Product Introduction
PHT1N60R-VB is a high voltage N-Channel MOSFET, SOT223 package, designed for high voltage applications, with a maximum drain-source voltage (VDS) of 650V. The device has a high on-resistance under a 10V gate drive, suitable for applications with lower currents. PHT1N60R-VB has good switching performance and reliability, and is widely used in power management and control systems, and can meet the high voltage requirements of various electronic devices.
PHT1N60R-VB is a high voltage N-Channel MOSFET, SOT223 package, designed for high voltage applications, with a maximum drain-source voltage (VDS) of 650V. The device has a high on-resistance under a 10V gate drive, suitable for applications with lower currents. PHT1N60R-VB has good switching performance and reliability, and is widely used in power management and control systems, and can meet the high voltage requirements of various electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 650V | 3.5V | 1A | 8000mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 650V | 3.5V | 1A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 650V | 3.5V | 1A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Detailed parameter description
- **Model**: PHT1N60R-VB
- **Package**: SOT223
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 10000mΩ @ VGS = 4.5V
- 8000mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 1A
- **Technology**: Plannar
- **Model**: PHT1N60R-VB
- **Package**: SOT223
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 10000mΩ @ VGS = 4.5V
- 8000mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 1A
- **Technology**: Plannar
Domain and module applications：
Application fields and module examples
1. **High-voltage power management**: PHT1N60R-VB is suitable for high-voltage power management systems, and can provide stable current in high-voltage environments. It is widely used in power adapters and power converters to ensure high efficiency of the system.
2. **Switching power supply (SMPS)**: This MOSFET performs well in switching power supplies and is suitable for high-voltage switching converters to improve energy efficiency and reduce switching losses. It is suitable for the design of various power modules.
3. **Motor control**: In motor drive applications, PHT1N60R-VB can stably control the operation of the motor under high voltage conditions and is widely used in small motors and drive equipment.
4. **Automotive electronics**: This device is suitable for use in automotive electronic systems, such as high-voltage switches and power management modules, to meet the needs of modern cars for high-voltage power supplies.
5. **Lighting control**: PHT1N60R-VB can be used in high-voltage lighting control systems to ensure safe and stable operation under high voltage, suitable for LED driving and other lighting applications.
In summary, PHT1N60R-VB is a high-voltage N-Channel MOSFET, suitable for high voltage and low current applications, and can effectively improve the performance and reliability of the system.
1. **High-voltage power management**: PHT1N60R-VB is suitable for high-voltage power management systems, and can provide stable current in high-voltage environments. It is widely used in power adapters and power converters to ensure high efficiency of the system.
2. **Switching power supply (SMPS)**: This MOSFET performs well in switching power supplies and is suitable for high-voltage switching converters to improve energy efficiency and reduce switching losses. It is suitable for the design of various power modules.
3. **Motor control**: In motor drive applications, PHT1N60R-VB can stably control the operation of the motor under high voltage conditions and is widely used in small motors and drive equipment.
4. **Automotive electronics**: This device is suitable for use in automotive electronic systems, such as high-voltage switches and power management modules, to meet the needs of modern cars for high-voltage power supplies.
5. **Lighting control**: PHT1N60R-VB can be used in high-voltage lighting control systems to ensure safe and stable operation under high voltage, suitable for LED driving and other lighting applications.
In summary, PHT1N60R-VB is a high-voltage N-Channel MOSFET, suitable for high voltage and low current applications, and can effectively improve the performance and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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