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PHD9NQ20T-VB Product details
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PHD9NQ20T-VB Product Introduction
PHD9NQ20T-VB is a high voltage N-Channel MOSFET in TO252 package, designed for applications requiring high voltage operation. Its maximum drain-source voltage can reach 200V, suitable for high voltage systems. The device has an on-resistance of 245mΩ at VGS=10V, enabling it to carry up to 10A of leakage current at lower power consumption. This makes PHD9NQ20T-VB particularly suitable for applications requiring high efficiency and high reliability.
PHD9NQ20T-VB is a high voltage N-Channel MOSFET in TO252 package, designed for applications requiring high voltage operation. Its maximum drain-source voltage can reach 200V, suitable for high voltage systems. The device has an on-resistance of 245mΩ at VGS=10V, enabling it to carry up to 10A of leakage current at lower power consumption. This makes PHD9NQ20T-VB particularly suitable for applications requiring high efficiency and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: PHD9NQ20T-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 245mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 10A
- **Technology**: Trench
- **Model**: PHD9NQ20T-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 245mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 10A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Power converter**: PHD9NQ20T-VB is widely used in DC-DC converters, which can efficiently convert input voltage to the required output voltage while reducing energy loss.
2. **Industrial control**: The device is suitable for various industrial control systems, such as motor drives and automation equipment, providing stable power support to meet high load requirements.
3. **Automotive electronics**: PHD9NQ20T-VB can be used in automotive electronics applications, such as battery management systems and motor control modules, to achieve high efficiency and reliability.
4. **LED driver**: This MOSFET is suitable for LED driver power supply, ensuring stable current output to maintain the brightness of LEDs and extend their service life.
5. **High-voltage power supply system**: The high drain-source voltage characteristics of PHD9NQ20T-VB make it an ideal switching device in high-voltage power supply systems, capable of withstanding higher voltages without compromising performance.
PHD9NQ20T-VB is a high-efficiency MOSFET suitable for a variety of high-voltage applications, able to meet the high performance and energy efficiency requirements of modern electronic devices.
1. **Power converter**: PHD9NQ20T-VB is widely used in DC-DC converters, which can efficiently convert input voltage to the required output voltage while reducing energy loss.
2. **Industrial control**: The device is suitable for various industrial control systems, such as motor drives and automation equipment, providing stable power support to meet high load requirements.
3. **Automotive electronics**: PHD9NQ20T-VB can be used in automotive electronics applications, such as battery management systems and motor control modules, to achieve high efficiency and reliability.
4. **LED driver**: This MOSFET is suitable for LED driver power supply, ensuring stable current output to maintain the brightness of LEDs and extend their service life.
5. **High-voltage power supply system**: The high drain-source voltage characteristics of PHD9NQ20T-VB make it an ideal switching device in high-voltage power supply systems, capable of withstanding higher voltages without compromising performance.
PHD9NQ20T-VB is a high-efficiency MOSFET suitable for a variety of high-voltage applications, able to meet the high performance and energy efficiency requirements of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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