PHD96NQ03LT-VB Product details
Product introduction:
PHD96NQ03LT-VB is a high-performance N-channel MOSFET in a TO252 package, designed for high current and low voltage applications. With a drain-source voltage (VDS) of 30V, the device is suitable for use in high-efficiency power management and switching applications. The threshold voltage (Vth) is 1.7V, ensuring fast turn-on under low voltage conditions. Its on-resistance (RDS(ON)) is only 3mΩ at VGS=4.5V, reducing to 2mΩ at VGS=10V, supporting a continuous drain current (ID) of up to 100A. Utilizing Trench technology, this MOSFET performs well in high-frequency switching applications, significantly reducing power consumption and improving overall system efficiency.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Model**: PHD96NQ03LT-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ (@VGS=4.5V)
- 2mΩ (@VGS=10V)
- **Continuous leakage current (ID)**: 100A
- **Technology**: Trench
Domain and module applications:
1. **Power management**: PHD96NQ03LT-VB is very suitable for high-efficiency switching power supplies (SMPS) and DC-DC converters. Its ultra-low on-resistance helps significantly improve energy efficiency and reduce power loss. It is widely used in power management of computer power supplies and portable devices.
2. **Motor drive**: In motor control applications, this MOSFET can be used as a switching element in an H-bridge configuration to provide efficient current control. It is suitable for motor drive systems in many fields such as electric vehicles, robots and household appliances.
3. **LED drive**: This device performs well in LED lighting systems, can provide stable current to LEDs, and achieve efficient brightness adjustment. It is suitable for various indoor and outdoor lighting applications.
4. **Inverter**: In renewable energy applications, such as solar and wind energy systems, PHD96NQ03LT-VB can be used in high-frequency switching circuits in inverters to optimize energy conversion efficiency and improve the overall performance of the system.
Technical support:
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