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PHD96NQ03LT-VB Product details

Product introduction:

Product Introduction

PHD96NQ03LT-VB is a high-performance N-channel MOSFET in a TO252 package, designed for high current and low voltage applications. With a drain-source voltage (VDS) of 30V, the device is suitable for use in high-efficiency power management and switching applications. The threshold voltage (Vth) is 1.7V, ensuring fast turn-on under low voltage conditions. Its on-resistance (RDS(ON)) is only 3mΩ at VGS=4.5V, reducing to 2mΩ at VGS=10V, supporting a continuous drain current (ID) of up to 100A. Utilizing Trench technology, this MOSFET performs well in high-frequency switching applications, significantly reducing power consumption and improving overall system efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 30V 1.7V 100A 2mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 30V 1.7V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 30V 1.7V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed parameter description

- **Model**: PHD96NQ03LT-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ (@VGS=4.5V)
- 2mΩ (@VGS=10V)
- **Continuous leakage current (ID)**: 100A
- **Technology**: Trench

Domain and module applications:

Applications and module examples

1. **Power management**: PHD96NQ03LT-VB is very suitable for high-efficiency switching power supplies (SMPS) and DC-DC converters. Its ultra-low on-resistance helps significantly improve energy efficiency and reduce power loss. It is widely used in power management of computer power supplies and portable devices.

2. **Motor drive**: In motor control applications, this MOSFET can be used as a switching element in an H-bridge configuration to provide efficient current control. It is suitable for motor drive systems in many fields such as electric vehicles, robots and household appliances.

3. **LED drive**: This device performs well in LED lighting systems, can provide stable current to LEDs, and achieve efficient brightness adjustment. It is suitable for various indoor and outdoor lighting applications.

4. **Inverter**: In renewable energy applications, such as solar and wind energy systems, PHD96NQ03LT-VB can be used in high-frequency switching circuits in inverters to optimize energy conversion efficiency and improve the overall performance of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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