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PHD95N03LT-VB Product details
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PHD95N03LT-VB Product Introduction
PHD95N03LT-VB is a high-performance N-channel MOSFET in TO252 package, designed for low voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 30V, which is suitable for various circuits requiring high current output. Its on-resistance (RDS(ON)) is 3mΩ when VGS is 4.5V, and only 2mΩ when VGS is 10V, ensuring excellent conductivity under load conditions, which can effectively reduce energy loss and heat, thereby improving the overall efficiency and reliability of the system.
PHD95N03LT-VB is a high-performance N-channel MOSFET in TO252 package, designed for low voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 30V, which is suitable for various circuits requiring high current output. Its on-resistance (RDS(ON)) is 3mΩ when VGS is 4.5V, and only 2mΩ when VGS is 10V, ensuring excellent conductivity under load conditions, which can effectively reduce energy loss and heat, thereby improving the overall efficiency and reliability of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: PHD95N03LT-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench technology (Trench)
- **Model**: PHD95N03LT-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench technology (Trench)
Domain and module applications：
Application fields and module examples
PHD95N03LT-VB is suitable for multiple fields and modules due to its superior performance. Here are some specific application examples:
1. **Power management**: PHD95N03LT-VB is widely used in power management systems, especially in DC-DC converters. Its low on-resistance and high current capability can improve conversion efficiency and reduce energy loss.
2. **Motor drive**: This MOSFET can support fast switching operations and is very suitable for motor control applications, including brushless DC motors and stepper motors, ensuring efficient and stable operation of the motor.
3. **LED drive circuit**: In LED drive applications, PHD95N03LT-VB can provide precise current control to ensure the brightness and consistency of LEDs, suitable for various lighting and display devices.
4. **Battery management system**: This MOSFET performs well in battery charge and discharge management, can effectively protect the battery, and is widely used in electric vehicles, renewable energy storage and other energy management systems.
5. **Consumer Electronics**: PHD95N03LT-VB provides efficient power management in various consumer electronic devices, such as smartphones, tablets and wearable devices, improving the overall performance and user experience of the device.
Through these application examples, the diversity and high performance of PHD95N03LT-VB are fully demonstrated, making it an indispensable component in modern electronic design.
PHD95N03LT-VB is suitable for multiple fields and modules due to its superior performance. Here are some specific application examples:
1. **Power management**: PHD95N03LT-VB is widely used in power management systems, especially in DC-DC converters. Its low on-resistance and high current capability can improve conversion efficiency and reduce energy loss.
2. **Motor drive**: This MOSFET can support fast switching operations and is very suitable for motor control applications, including brushless DC motors and stepper motors, ensuring efficient and stable operation of the motor.
3. **LED drive circuit**: In LED drive applications, PHD95N03LT-VB can provide precise current control to ensure the brightness and consistency of LEDs, suitable for various lighting and display devices.
4. **Battery management system**: This MOSFET performs well in battery charge and discharge management, can effectively protect the battery, and is widely used in electric vehicles, renewable energy storage and other energy management systems.
5. **Consumer Electronics**: PHD95N03LT-VB provides efficient power management in various consumer electronic devices, such as smartphones, tablets and wearable devices, improving the overall performance and user experience of the device.
Through these application examples, the diversity and high performance of PHD95N03LT-VB are fully demonstrated, making it an indispensable component in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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