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PHD82NQ03LT-VB Product details
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Product Introduction
PHD82NQ03LT-VB is a high-efficiency N-channel MOSFET in TO252 package, designed for low voltage and high current applications. It has a rated drain-source voltage of 30V, extremely low on-resistance, and a maximum leakage current capability of 100A, making it an excellent performer in high-frequency and high-efficiency power conversion. PHD82NQ03LT-VB is an ideal choice for a variety of applications such as power management, motor drive and consumer electronics, and can significantly improve the overall energy efficiency of the system.
PHD82NQ03LT-VB is a high-efficiency N-channel MOSFET in TO252 package, designed for low voltage and high current applications. It has a rated drain-source voltage of 30V, extremely low on-resistance, and a maximum leakage current capability of 100A, making it an excellent performer in high-frequency and high-efficiency power conversion. PHD82NQ03LT-VB is an ideal choice for a variety of applications such as power management, motor drive and consumer electronics, and can significantly improve the overall energy efficiency of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: PHD82NQ03LT-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **RDS(ON)**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **ID (leakage current)**: 100A
- **Technology**: Trench process
- **Model**: PHD82NQ03LT-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **RDS(ON)**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **ID (leakage current)**: 100A
- **Technology**: Trench process
Domain and module applications：
Application fields and modules
PHD82NQ03LT-VB MOSFET can be widely used in the following fields and modules:
1. **Power management**: In switching power supplies and DC-DC converters, this MOSFET achieves efficient power transmission with its ultra-low on-resistance and high current capability, suitable for power regulation and management modules, and significantly improves system efficiency.
2. **Motor control**: PHD82NQ03LT-VB performs well in motor drive systems, can handle high current and low voltage applications, ensures fast start-up and smooth operation of motors, and is widely used in industrial automation and electric vehicles.
3. **LED drive**: This device is suitable for high-power LED driving, and can provide stable current in a variety of lighting solutions to ensure consistent brightness and extended service life.
4. **Automotive electronics**: PHD82NQ03LT-VB is suitable for use in automotive power management and power conversion, and can work stably under high current and low voltage conditions, especially suitable for battery management systems and motor control modules.
5. **Consumer electronics**: In smart devices and home appliances, this MOSFET can be used for power switching and signal conditioning to optimize energy consumption, improve device performance, and provide users with a better user experience.
PHD82NQ03LT-VB MOSFET can be widely used in the following fields and modules:
1. **Power management**: In switching power supplies and DC-DC converters, this MOSFET achieves efficient power transmission with its ultra-low on-resistance and high current capability, suitable for power regulation and management modules, and significantly improves system efficiency.
2. **Motor control**: PHD82NQ03LT-VB performs well in motor drive systems, can handle high current and low voltage applications, ensures fast start-up and smooth operation of motors, and is widely used in industrial automation and electric vehicles.
3. **LED drive**: This device is suitable for high-power LED driving, and can provide stable current in a variety of lighting solutions to ensure consistent brightness and extended service life.
4. **Automotive electronics**: PHD82NQ03LT-VB is suitable for use in automotive power management and power conversion, and can work stably under high current and low voltage conditions, especially suitable for battery management systems and motor control modules.
5. **Consumer electronics**: In smart devices and home appliances, this MOSFET can be used for power switching and signal conditioning to optimize energy consumption, improve device performance, and provide users with a better user experience.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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