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PHD77NQ03T-VB Product details
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PHD77NQ03T-VB Product Introduction
PHD77NQ03T-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high current and low voltage applications. Its maximum drain-source voltage (VDS) is 30V, and it has an extremely low on-resistance (RDS(ON)), which is 3mΩ and 2mΩ at VGS of 4.5V and 10V respectively, which can effectively reduce power consumption and improve efficiency. This MOSFET adopts Trench technology and is suitable for a variety of application scenarios such as high-frequency switching and power management, providing excellent performance and reliability.
PHD77NQ03T-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high current and low voltage applications. Its maximum drain-source voltage (VDS) is 30V, and it has an extremely low on-resistance (RDS(ON)), which is 3mΩ and 2mΩ at VGS of 4.5V and 10V respectively, which can effectively reduce power consumption and improve efficiency. This MOSFET adopts Trench technology and is suitable for a variety of application scenarios such as high-frequency switching and power management, providing excellent performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 100A
- **Technology type**: Trench
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 100A
- **Technology type**: Trench
Domain and module applications：
Applications and modules
1. **Power management**: PHD77NQ03T-VB performs well in switching power supplies (SMPS) and DC-DC converters. Its low on-resistance can significantly reduce power consumption and improve system efficiency, making it an ideal choice for power management modules.
2. **Electric drive**: Suitable for power tools, electric vehicles, and various motor control applications. Its high leakage current capability supports the fast start-up and efficient operation of the motor, providing reliable current support for various drive systems.
3. **LED drive**: In LED lighting and display applications, PHD77NQ03T-VB can stably control the current of the LED. Its high efficiency ensures the stability and long life of the light source, which is suitable for commercial and home lighting solutions.
4. **Battery management system**: In battery charge and discharge management, this MOSFET can optimize current control, which is suitable for electric vehicles and renewable energy storage systems, improves charge and discharge efficiency, and enhances battery life.
5. **Consumer Electronics**: This MOSFET is suitable for power modules of various consumer electronic devices. Through efficient power control, it reduces energy loss and provides users with better product experience and battery life.
1. **Power management**: PHD77NQ03T-VB performs well in switching power supplies (SMPS) and DC-DC converters. Its low on-resistance can significantly reduce power consumption and improve system efficiency, making it an ideal choice for power management modules.
2. **Electric drive**: Suitable for power tools, electric vehicles, and various motor control applications. Its high leakage current capability supports the fast start-up and efficient operation of the motor, providing reliable current support for various drive systems.
3. **LED drive**: In LED lighting and display applications, PHD77NQ03T-VB can stably control the current of the LED. Its high efficiency ensures the stability and long life of the light source, which is suitable for commercial and home lighting solutions.
4. **Battery management system**: In battery charge and discharge management, this MOSFET can optimize current control, which is suitable for electric vehicles and renewable energy storage systems, improves charge and discharge efficiency, and enhances battery life.
5. **Consumer Electronics**: This MOSFET is suitable for power modules of various consumer electronic devices. Through efficient power control, it reduces energy loss and provides users with better product experience and battery life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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