中文
English
PHD77NQ03LT-VB Product details
Back to previous pageProduct introduction：
Product Introduction: PHD77NQ03LT-VB
PHD77NQ03LT-VB is a high-performance single N-channel MOSFET in TO252 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 30V, supporting a drain current (ID) of up to 100A, which is very suitable for circuits requiring high load capacity. The threshold voltage (Vth) is 1.7V, which can be turned on quickly at a lower gate-source voltage. The on-resistance (RDS(ON)) of this MOSFET is 3mΩ at 4.5V and 2mΩ at 10V, showing extremely low energy loss and excellent thermal performance.
PHD77NQ03LT-VB is a high-performance single N-channel MOSFET in TO252 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 30V, supporting a drain current (ID) of up to 100A, which is very suitable for circuits requiring high load capacity. The threshold voltage (Vth) is 1.7V, which can be turned on quickly at a lower gate-source voltage. The on-resistance (RDS(ON)) of this MOSFET is 3mΩ at 4.5V and 2mΩ at 10V, showing extremely low energy loss and excellent thermal performance.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
- **Model**: PHD77NQ03LT-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON)**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **ID (leakage current)**: 100A
- **Technology**: Trench
- **Model**: PHD77NQ03LT-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON)**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **ID (leakage current)**: 100A
- **Technology**: Trench
Domain and module applications：
Application areas and module examples:
1. **Power management system**: PHD77NQ03LT-VB performs well in switching power supplies and DC-DC converters, significantly reducing power consumption in efficient energy conversion, thereby improving the overall efficiency of the system.
2. **Motor control**: In the motor drive circuits of various power tools and household appliances, PHD77NQ03LT-VB can withstand high current loads, ensure smooth start-up and efficient operation of the motor, and enhance user experience.
3. **LED drive**: This MOSFET is very suitable for LED lighting systems. It can accurately adjust the drive current of the LED to ensure the consistency of color and brightness. It is widely used in indoor and outdoor lighting solutions.
4. **Battery management and charging system**: In electric vehicles and renewable energy storage systems, the high current handling capability of PHD77NQ03LT-VB makes it an ideal choice, which can efficiently manage the fast charging and discharging process and improve the safety and life of the battery.
5. **Consumer Electronics**: In the power management of smartphones, tablets and other portable devices, this MOSFET can be used as a switching element to effectively control the power flow, optimize battery efficiency and extend the device life.
Through these application examples, PHD77NQ03LT-VB demonstrates its wide applicability in multiple fields, providing efficient and reliable solutions to meet the needs of modern electronic design.
1. **Power management system**: PHD77NQ03LT-VB performs well in switching power supplies and DC-DC converters, significantly reducing power consumption in efficient energy conversion, thereby improving the overall efficiency of the system.
2. **Motor control**: In the motor drive circuits of various power tools and household appliances, PHD77NQ03LT-VB can withstand high current loads, ensure smooth start-up and efficient operation of the motor, and enhance user experience.
3. **LED drive**: This MOSFET is very suitable for LED lighting systems. It can accurately adjust the drive current of the LED to ensure the consistency of color and brightness. It is widely used in indoor and outdoor lighting solutions.
4. **Battery management and charging system**: In electric vehicles and renewable energy storage systems, the high current handling capability of PHD77NQ03LT-VB makes it an ideal choice, which can efficiently manage the fast charging and discharging process and improve the safety and life of the battery.
5. **Consumer Electronics**: In the power management of smartphones, tablets and other portable devices, this MOSFET can be used as a switching element to effectively control the power flow, optimize battery efficiency and extend the device life.
Through these application examples, PHD77NQ03LT-VB demonstrates its wide applicability in multiple fields, providing efficient and reliable solutions to meet the needs of modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
