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PHD71NQ03LT-VB Product details
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PHD71NQ03LT-VB Product Introduction
PHD71NQ03LT-VB is a high-performance N-Channel MOSFET in TO252 package, designed for low voltage and high current applications. The device has a maximum drain-source voltage of 30V and can carry a leakage current of up to 100A, suitable for occasions requiring fast switching and high efficiency. It uses advanced Trench technology and has a low on-resistance (RDS(ON)) of only 3mΩ at VGS=4.5V, which greatly reduces power consumption and improves system performance.
PHD71NQ03LT-VB is a high-performance N-Channel MOSFET in TO252 package, designed for low voltage and high current applications. The device has a maximum drain-source voltage of 30V and can carry a leakage current of up to 100A, suitable for occasions requiring fast switching and high efficiency. It uses advanced Trench technology and has a low on-resistance (RDS(ON)) of only 3mΩ at VGS=4.5V, which greatly reduces power consumption and improves system performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: PHD71NQ03LT-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench
- **Model**: PHD71NQ03LT-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Power management**: PHD71NQ03LT-VB is widely used in power management circuits, such as DC-DC converters and switching power supplies, and can provide high current output at lower voltages, improving the overall efficiency of the power supply.
2. **Power tools**: In the battery-driven system of power tools, this MOSFET can withstand instantaneous large currents, ensuring stable operation of the tool under high load conditions, improving the performance and endurance of the tool.
3. **LED lighting driver**: PHD71NQ03LT-VB can be used as an efficient switch in LED driver power supplies, providing fast current regulation to ensure stable brightness and long life of the LED.
4. **Automotive electronics**: The device is suitable for use in automotive electronic control modules, such as motor control, lighting systems and power distribution, to improve the energy efficiency and performance of the car.
5. **Consumer Electronics**: PHD71NQ03LT-VB is also suitable for a variety of consumer electronics products, such as portable devices and home appliances, to effectively manage power and improve the performance and reliability of the equipment.
PHD71NQ03LT-VB is a high-efficiency, low on-resistance MOSFET, especially suitable for low voltage and high current applications, meeting the performance and energy efficiency requirements of modern electronic devices.
1. **Power management**: PHD71NQ03LT-VB is widely used in power management circuits, such as DC-DC converters and switching power supplies, and can provide high current output at lower voltages, improving the overall efficiency of the power supply.
2. **Power tools**: In the battery-driven system of power tools, this MOSFET can withstand instantaneous large currents, ensuring stable operation of the tool under high load conditions, improving the performance and endurance of the tool.
3. **LED lighting driver**: PHD71NQ03LT-VB can be used as an efficient switch in LED driver power supplies, providing fast current regulation to ensure stable brightness and long life of the LED.
4. **Automotive electronics**: The device is suitable for use in automotive electronic control modules, such as motor control, lighting systems and power distribution, to improve the energy efficiency and performance of the car.
5. **Consumer Electronics**: PHD71NQ03LT-VB is also suitable for a variety of consumer electronics products, such as portable devices and home appliances, to effectively manage power and improve the performance and reliability of the equipment.
PHD71NQ03LT-VB is a high-efficiency, low on-resistance MOSFET, especially suitable for low voltage and high current applications, meeting the performance and energy efficiency requirements of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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