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PHD6N10E-VB Product details
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PHD6N10E-VB Product Introduction
PHD6N10E-VB is a high-efficiency N-Channel MOSFET in TO252 package, designed for medium voltage applications. Its maximum drain-source voltage (VDS) can reach 100V, and its maximum drain current (ID) is 15A, which is suitable for a variety of power conversion and drive circuits. The device has a threshold voltage (Vth) of 1.8V and excellent conduction characteristics. The on-resistance (RDS(ON)) is only 114mΩ at a gate-source voltage of 10V, which can effectively reduce switching losses and improve overall efficiency. PHD6N10E-VB uses Trench technology to ensure its reliability and efficiency in high-frequency and high-power applications.
PHD6N10E-VB is a high-efficiency N-Channel MOSFET in TO252 package, designed for medium voltage applications. Its maximum drain-source voltage (VDS) can reach 100V, and its maximum drain current (ID) is 15A, which is suitable for a variety of power conversion and drive circuits. The device has a threshold voltage (Vth) of 1.8V and excellent conduction characteristics. The on-resistance (RDS(ON)) is only 114mΩ at a gate-source voltage of 10V, which can effectively reduce switching losses and improve overall efficiency. PHD6N10E-VB uses Trench technology to ensure its reliability and efficiency in high-frequency and high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: PHD6N10E-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 114mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 15A
- **Technology**: Trench
- **Model**: PHD6N10E-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 114mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 15A
- **Technology**: Trench
Domain and module applications：
Application fields and modules
PHD6N10E-VB is widely used in the following fields:
1. **Power conversion**:
- In switching power supplies and DC-DC converters, PHD6N10E-VB, as an efficient switch, can optimize power conversion and improve the overall energy efficiency of the system. It is suitable for computer power supplies and communication equipment.
2. **Motor drive**:
- In the motor drive circuit, this MOSFET can be used to control the start and stop and speed regulation of the motor, especially suitable for motor control systems in industrial automation and home appliances.
3. **LED lighting**:
- In the LED drive circuit, the brightness and operating efficiency of the LED are adjusted by controlling the current, which is suitable for commercial lighting and home lighting equipment.
4. **Battery management system**:
- PHD6N10E-VB can be used for battery charge and discharge management, improve battery efficiency and safety, and is widely used in electric vehicles and portable devices.
5. **Consumer Electronics**:
- As a power management component in various consumer electronic products, it improves the energy efficiency of the equipment and is suitable for modern electronic devices such as smartphones and tablets.
With its excellent performance, PHD6N10E-VB is an ideal choice for various power and drive applications, and can meet the needs of efficiency and reliability in different occasions.
PHD6N10E-VB is widely used in the following fields:
1. **Power conversion**:
- In switching power supplies and DC-DC converters, PHD6N10E-VB, as an efficient switch, can optimize power conversion and improve the overall energy efficiency of the system. It is suitable for computer power supplies and communication equipment.
2. **Motor drive**:
- In the motor drive circuit, this MOSFET can be used to control the start and stop and speed regulation of the motor, especially suitable for motor control systems in industrial automation and home appliances.
3. **LED lighting**:
- In the LED drive circuit, the brightness and operating efficiency of the LED are adjusted by controlling the current, which is suitable for commercial lighting and home lighting equipment.
4. **Battery management system**:
- PHD6N10E-VB can be used for battery charge and discharge management, improve battery efficiency and safety, and is widely used in electric vehicles and portable devices.
5. **Consumer Electronics**:
- As a power management component in various consumer electronic products, it improves the energy efficiency of the equipment and is suitable for modern electronic devices such as smartphones and tablets.
With its excellent performance, PHD6N10E-VB is an ideal choice for various power and drive applications, and can meet the needs of efficiency and reliability in different occasions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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