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PHD66NQ03LT-VB Product details
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Product Introduction
PHD66NQ03LT-VB is a high-performance N-channel MOSFET in TO252 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 30V, the maximum gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is 1.7V. The on-resistance (RDS(ON)) of this MOSFET is 6mΩ and 5mΩ at 4.5V and 10V gate voltages, respectively, ensuring excellent switching performance and energy efficiency. With its high current handling capability (maximum drain current of 80A), PHD66NQ03LT-VB is suitable for a variety of power management and drive applications.
PHD66NQ03LT-VB is a high-performance N-channel MOSFET in TO252 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 30V, the maximum gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is 1.7V. The on-resistance (RDS(ON)) of this MOSFET is 6mΩ and 5mΩ at 4.5V and 10V gate voltages, respectively, ensuring excellent switching performance and energy efficiency. With its high current handling capability (maximum drain current of 80A), PHD66NQ03LT-VB is suitable for a variety of power management and drive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: PHD66NQ03LT-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench
- **Model**: PHD66NQ03LT-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Switching Power Supply (SMPS)**: PHD66NQ03LT-VB can be widely used in switching power supply systems to provide support for efficient power conversion. Its low on-resistance can reduce power consumption and heat, and is suitable for a variety of consumer electronics products.
2. **Motor Drive**: This MOSFET is suitable for DC motor control, and can provide fast response and high efficiency. It is commonly used in motor drive systems of home appliances, industrial automation and electric vehicles to ensure smooth current output.
3. **LED Drive**: PHD66NQ03LT-VB can be used in LED lighting modules to provide stable current drive. It is suitable for commercial and home lighting applications to improve the performance and service life of light sources.
4. **Battery Management System**: In battery charging and management applications, this MOSFET can effectively control the charging current and optimize battery performance. It is widely used in electric vehicles and renewable energy storage systems to ensure safe and efficient battery management.
5. **Inverter**: PHD66NQ03LT-VB can also be used in solar inverters to help convert DC power into AC power, support the use of green energy, and promote sustainable development.
1. **Switching Power Supply (SMPS)**: PHD66NQ03LT-VB can be widely used in switching power supply systems to provide support for efficient power conversion. Its low on-resistance can reduce power consumption and heat, and is suitable for a variety of consumer electronics products.
2. **Motor Drive**: This MOSFET is suitable for DC motor control, and can provide fast response and high efficiency. It is commonly used in motor drive systems of home appliances, industrial automation and electric vehicles to ensure smooth current output.
3. **LED Drive**: PHD66NQ03LT-VB can be used in LED lighting modules to provide stable current drive. It is suitable for commercial and home lighting applications to improve the performance and service life of light sources.
4. **Battery Management System**: In battery charging and management applications, this MOSFET can effectively control the charging current and optimize battery performance. It is widely used in electric vehicles and renewable energy storage systems to ensure safe and efficient battery management.
5. **Inverter**: PHD66NQ03LT-VB can also be used in solar inverters to help convert DC power into AC power, support the use of green energy, and promote sustainable development.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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