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PHD55N03LTA-VB Product details
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Product Introduction
PHD55N03LTA-VB is a high-efficiency N-channel MOSFET in a TO252 package, designed for high current and low voltage applications. Its drain-source voltage (VDS) is 30V, making it ideal for low-voltage power management and switching applications. The device has a threshold voltage (Vth) of 1.7V, ensuring fast turn-on even under low voltage conditions. At VGS=4.5V, the on-resistance (RDS(ON)) is only 6mΩ, and is further reduced to 5mΩ at VGS=10V, supporting a continuous drain current (ID) of up to 80A. By using Trench technology, this MOSFET performs well in high-frequency switching applications, helping to reduce power consumption and improve system efficiency.
PHD55N03LTA-VB is a high-efficiency N-channel MOSFET in a TO252 package, designed for high current and low voltage applications. Its drain-source voltage (VDS) is 30V, making it ideal for low-voltage power management and switching applications. The device has a threshold voltage (Vth) of 1.7V, ensuring fast turn-on even under low voltage conditions. At VGS=4.5V, the on-resistance (RDS(ON)) is only 6mΩ, and is further reduced to 5mΩ at VGS=10V, supporting a continuous drain current (ID) of up to 80A. By using Trench technology, this MOSFET performs well in high-frequency switching applications, helping to reduce power consumption and improve system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: PHD55N03LTA-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ (@VGS=4.5V)
- 5mΩ (@VGS=10V)
- **Continuous leakage current (ID)**: 80A
- **Technology**: Trench
- **Model**: PHD55N03LTA-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ (@VGS=4.5V)
- 5mΩ (@VGS=10V)
- **Continuous leakage current (ID)**: 80A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power management**: PHD55N03LTA-VB is suitable for switching power supplies (SMPS) and DC-DC converters. Its low on-resistance helps improve energy efficiency and reduce energy loss. It is widely used in power management modules of laptops and other portable electronic devices.
2. **Motor drive**: In motor control applications, this MOSFET can be used as a switching element in the H-bridge to support efficient motor drive and control. It is suitable for motor control systems of electric vehicles, robots, and various automation equipment.
3. **LED drive**: This device performs well in LED lighting systems, can provide stable current, effectively adjust LED brightness, and is widely used in indoor and outdoor lighting solutions.
4. **Inverter**: In renewable energy applications, PHD55N03LTA-VB can be used in high-frequency switching circuits in solar inverters and wind converters to optimize energy conversion and improve the overall performance and efficiency of the system.
1. **Power management**: PHD55N03LTA-VB is suitable for switching power supplies (SMPS) and DC-DC converters. Its low on-resistance helps improve energy efficiency and reduce energy loss. It is widely used in power management modules of laptops and other portable electronic devices.
2. **Motor drive**: In motor control applications, this MOSFET can be used as a switching element in the H-bridge to support efficient motor drive and control. It is suitable for motor control systems of electric vehicles, robots, and various automation equipment.
3. **LED drive**: This device performs well in LED lighting systems, can provide stable current, effectively adjust LED brightness, and is widely used in indoor and outdoor lighting solutions.
4. **Inverter**: In renewable energy applications, PHD55N03LTA-VB can be used in high-frequency switching circuits in solar inverters and wind converters to optimize energy conversion and improve the overall performance and efficiency of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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