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PHD50N06LT-VB Product details
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PHD50N06LT-VB Product Introduction
PHD50N06LT-VB is a high-performance N-channel MOSFET in TO252 package, designed for low voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, which is suitable for use in circuits requiring high current and lower voltage. Its on-resistance (RDS(ON)) is 13mΩ at VGS of 4.5V, and drops to 10mΩ at VGS of 10V, which can effectively reduce energy loss and heat generation, and provide excellent switching performance and system efficiency.
PHD50N06LT-VB is a high-performance N-channel MOSFET in TO252 package, designed for low voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, which is suitable for use in circuits requiring high current and lower voltage. Its on-resistance (RDS(ON)) is 13mΩ at VGS of 4.5V, and drops to 10mΩ at VGS of 10V, which can effectively reduce energy loss and heat generation, and provide excellent switching performance and system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: PHD50N06LT-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum drain current (ID)**: 58A
- **Technology**: Trench technology (Trench)
- **Model**: PHD50N06LT-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum drain current (ID)**: 58A
- **Technology**: Trench technology (Trench)
Domain and module applications：
Application fields and module examples
The excellent characteristics of PHD50N06LT-VB make it outstanding in many fields and modules. The following are some specific application examples:
1. **Power converter**: Due to its low on-resistance and high drain-source voltage, PHD50N06LT-VB is very suitable for DC-DC converters, which can significantly improve the conversion efficiency and is widely used in switching power supplies and power adapters.
2. **Motor drive**: This MOSFET can provide fast switching capability and stable current, which is very suitable for motor control systems such as brushless motors and stepper motors to ensure efficient motor performance.
3. **LED drive circuit**: In LED drive applications, PHD50N06LT-VB can provide stable current to ensure the brightness and consistency of LEDs, and is suitable for various lighting and display devices.
4. **Battery management system**: This MOSFET performs well in battery charging and discharging management, ensuring battery safety and efficiency, and is widely used in electric vehicles and renewable energy storage systems.
5. **Consumer Electronics**: PHD50N06LT-VB provides efficient power management solutions in consumer electronic devices such as smartphones, tablets and portable chargers, improving the overall performance and reliability of the device.
Through these application examples, the versatility and high performance of PHD50N06LT-VB are demonstrated, making it a key component in modern electronic design.
The excellent characteristics of PHD50N06LT-VB make it outstanding in many fields and modules. The following are some specific application examples:
1. **Power converter**: Due to its low on-resistance and high drain-source voltage, PHD50N06LT-VB is very suitable for DC-DC converters, which can significantly improve the conversion efficiency and is widely used in switching power supplies and power adapters.
2. **Motor drive**: This MOSFET can provide fast switching capability and stable current, which is very suitable for motor control systems such as brushless motors and stepper motors to ensure efficient motor performance.
3. **LED drive circuit**: In LED drive applications, PHD50N06LT-VB can provide stable current to ensure the brightness and consistency of LEDs, and is suitable for various lighting and display devices.
4. **Battery management system**: This MOSFET performs well in battery charging and discharging management, ensuring battery safety and efficiency, and is widely used in electric vehicles and renewable energy storage systems.
5. **Consumer Electronics**: PHD50N06LT-VB provides efficient power management solutions in consumer electronic devices such as smartphones, tablets and portable chargers, improving the overall performance and reliability of the device.
Through these application examples, the versatility and high performance of PHD50N06LT-VB are demonstrated, making it a key component in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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