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PHD45N03LTA-VB Product details
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Product Introduction
PHD45N03LTA-VB is a high-performance N-channel MOSFET in TO252 package, designed for low voltage and high current applications. The device has a rated drain-source voltage of 30V and has a very low on-resistance, suitable for use in high-frequency and high-efficiency power conversion. With a drain current capability of up to 70A and excellent thermal characteristics, the PHD45N03LTA-VB is an ideal choice for applications such as power management, motor drive and consumer electronics.
PHD45N03LTA-VB is a high-performance N-channel MOSFET in TO252 package, designed for low voltage and high current applications. The device has a rated drain-source voltage of 30V and has a very low on-resistance, suitable for use in high-frequency and high-efficiency power conversion. With a drain current capability of up to 70A and excellent thermal characteristics, the PHD45N03LTA-VB is an ideal choice for applications such as power management, motor drive and consumer electronics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: PHD45N03LTA-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **RDS(ON)**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **ID (leakage current)**: 70A
- **Technology**: Trench process
- **Model**: PHD45N03LTA-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **RDS(ON)**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **ID (leakage current)**: 70A
- **Technology**: Trench process
Domain and module applications：
Applications and modules
PHD45N03LTA-VB MOSFET can be widely used in the following fields and modules:
1. **Power management**: This MOSFET performs well in switching power supplies and DC-DC converters. With its low on-resistance and high current handling capability, it can achieve efficient power transmission and is suitable for power regulation and management modules.
2. **Motor control**: PHD45N03LTA-VB has good performance in motor drive systems and can handle high current and low voltage applications, ensuring fast start-up and stable operation of motors. It is suitable for industrial automation and electric vehicles.
3. **LED drive**: In LED lighting solutions, this MOSFET can efficiently drive high-power LEDs, suitable for various lighting scenarios, providing stable brightness and extended service life.
4. **Automotive electronics**: This MOSFET can be used for power management and power conversion in automobiles. It can operate stably under high current and low voltage conditions and is suitable for battery management systems and motor control modules.
5. **Consumer Electronics**: In smart devices and home appliances, PHD45N03LTA-VB can be used for power switching and signal conditioning to optimize energy consumption, improve device performance, and provide users with a better experience.
PHD45N03LTA-VB MOSFET can be widely used in the following fields and modules:
1. **Power management**: This MOSFET performs well in switching power supplies and DC-DC converters. With its low on-resistance and high current handling capability, it can achieve efficient power transmission and is suitable for power regulation and management modules.
2. **Motor control**: PHD45N03LTA-VB has good performance in motor drive systems and can handle high current and low voltage applications, ensuring fast start-up and stable operation of motors. It is suitable for industrial automation and electric vehicles.
3. **LED drive**: In LED lighting solutions, this MOSFET can efficiently drive high-power LEDs, suitable for various lighting scenarios, providing stable brightness and extended service life.
4. **Automotive electronics**: This MOSFET can be used for power management and power conversion in automobiles. It can operate stably under high current and low voltage conditions and is suitable for battery management systems and motor control modules.
5. **Consumer Electronics**: In smart devices and home appliances, PHD45N03LTA-VB can be used for power switching and signal conditioning to optimize energy consumption, improve device performance, and provide users with a better experience.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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