PHD3N40E-VB Product details
Product introduction:
PHD3N40E-VB is a high-voltage unipolar N-type MOSFET in TO252 package, designed for high voltage applications. Its maximum drain-source voltage (VDS) can reach 650V, suitable for various circuits requiring high voltage. The on-resistance (RDS(ON)) of the device is 2200mΩ when VGS is 10V, which makes it have excellent efficiency when turned on and reduces power consumption. Its threshold voltage (Vth) is 3.5V, ensuring stable operation at a reasonable gate voltage, which is very suitable for the needs of industrial and consumer electronics.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | 2200mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Model**: PHD3N40E-VB
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2750mΩ @ VGS=4.5V
- 2200mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 4A
- **Technology**: Planar technology (Plannar)
Domain and module applications:
1. **Switching power supply**: PHD3N40E-VB is commonly used in switching power supply design, capable of handling high voltage and high current, providing efficient power conversion, especially in applications requiring stable output.
2. **Motor control**: This MOSFET can be used in motor drive circuits in industrial automation, suitable for motor starting and speed regulation, ensuring efficient operation of the motor.
3. **Battery management system**: In battery charge and discharge management, PHD3N40E-VB can be used for battery protection and current control, improving system safety and efficiency.
4. **Lighting control**: This device is also suitable for use in LED lighting drive circuits, providing stable lighting effects through efficient current regulation.
The high voltage capability and low on-resistance characteristics of PHD3N40E-VB make it an ideal choice for a variety of high voltage applications, able to meet the high performance and reliability requirements of modern electronic products.
Technical support:
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