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PHD38N02LT-VB Product details
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PHD38N02LT-VB Product Introduction
PHD38N02LT-VB is a high-performance single N-channel MOSFET in TO252 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 20V, the leakage current (ID) can reach 100A, and it has extremely low on-resistance. This MOSFET uses Trench technology and can provide excellent performance in high-frequency and high-efficiency power management, switch control and electric drive applications. It is a reliable choice in modern electronic design.
PHD38N02LT-VB is a high-performance single N-channel MOSFET in TO252 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 20V, the leakage current (ID) can reach 100A, and it has extremely low on-resistance. This MOSFET uses Trench technology and can provide excellent performance in high-frequency and high-efficiency power management, switch control and electric drive applications. It is a reliable choice in modern electronic design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: 100A
- **Technology type**: Trench
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: 100A
- **Technology type**: Trench
Domain and module applications：
Applications and modules
1. **Power management**: PHD38N02LT-VB performs well in switching power supplies (SMPS). Its low on-resistance enables it to maintain high energy efficiency under high current conditions. It is suitable for various power conversion and voltage regulation modules to improve system efficiency.
2. **Electric drive**: Suitable for power tools and motor control applications. Its high leakage current capability of 100A can provide stable current support to ensure efficient startup and operation of the equipment. It is an ideal choice for power tools and motor drive circuits.
3. **LED drive**: In LED lighting applications, PHD38N02LT-VB can effectively control the current of LED lamps. Its high efficiency performance ensures the reliability of the lighting system and is widely used in commercial and household lighting solutions.
4. **Battery management system**: This MOSFET can be used in battery management systems to optimize the charging and discharging process. Its high current handling capability plays a key role in improving the performance of electric vehicles and renewable energy storage systems.
5. **Consumer Electronics**: PHD38N02LT-VB is suitable for power modules of various consumer electronic products. It can improve device performance, reduce energy loss and provide consumers with a better user experience by efficiently controlling power management.
1. **Power management**: PHD38N02LT-VB performs well in switching power supplies (SMPS). Its low on-resistance enables it to maintain high energy efficiency under high current conditions. It is suitable for various power conversion and voltage regulation modules to improve system efficiency.
2. **Electric drive**: Suitable for power tools and motor control applications. Its high leakage current capability of 100A can provide stable current support to ensure efficient startup and operation of the equipment. It is an ideal choice for power tools and motor drive circuits.
3. **LED drive**: In LED lighting applications, PHD38N02LT-VB can effectively control the current of LED lamps. Its high efficiency performance ensures the reliability of the lighting system and is widely used in commercial and household lighting solutions.
4. **Battery management system**: This MOSFET can be used in battery management systems to optimize the charging and discharging process. Its high current handling capability plays a key role in improving the performance of electric vehicles and renewable energy storage systems.
5. **Consumer Electronics**: PHD38N02LT-VB is suitable for power modules of various consumer electronic products. It can improve device performance, reduce energy loss and provide consumers with a better user experience by efficiently controlling power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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