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PHD36NQ03LT-VB Product details
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Product Introduction: PHD36NQ03LT-VB
PHD36NQ03LT-VB is a high-performance single N-channel MOSFET in TO252 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 30V, supporting a drain current (ID) of up to 70A, suitable for operation under high load conditions. The threshold voltage (Vth) of this MOSFET is 1.7V, ensuring rapid turn-on at a lower gate-source voltage and excellent response time. At gate-source voltages of 4.5V and 10V, it has extremely low on-resistances (RDS(ON)) of 9mΩ and 7mΩ, respectively, effectively reducing power consumption and optimizing thermal performance.
PHD36NQ03LT-VB is a high-performance single N-channel MOSFET in TO252 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 30V, supporting a drain current (ID) of up to 70A, suitable for operation under high load conditions. The threshold voltage (Vth) of this MOSFET is 1.7V, ensuring rapid turn-on at a lower gate-source voltage and excellent response time. At gate-source voltages of 4.5V and 10V, it has extremely low on-resistances (RDS(ON)) of 9mΩ and 7mΩ, respectively, effectively reducing power consumption and optimizing thermal performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
- **Model**: PHD36NQ03LT-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON)**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **ID (leakage current)**: 70A
- **Technology**: Trench
- **Model**: PHD36NQ03LT-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON)**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **ID (leakage current)**: 70A
- **Technology**: Trench
Domain and module applications：
Application areas and module examples:
1. **Power converter**: PHD36NQ03LT-VB is suitable for switching power supplies and DC-DC converters. It performs well in efficient energy conversion. Through its low on-resistance, it reduces energy loss and improves overall efficiency.
2. **Motor drive**: In motor control circuits, this MOSFET can provide high current support and is suitable for various power tools and household appliances to ensure smooth start-up and efficient operation.
3. **LED drive circuit**: In LED drive applications, this device can accurately control LED current and optimize lighting effects. It is widely used in indoor and outdoor lighting systems.
4. **Battery management system**: PHD36NQ03LT-VB performs well in battery management and charging applications. It can withstand rapid charging and discharging, improve battery safety and life, and is suitable for electric vehicles and energy storage systems.
5. **Consumer electronics**: In the power management of products such as smartphones and tablets, this MOSFET acts as a switching element to effectively control the flow of power and enhance the energy efficiency and performance of the device.
Through these application examples, PHD36NQ03LT-VB demonstrates its wide applicability in multiple electronic fields, providing reliable and efficient solutions for modern electronic design.
1. **Power converter**: PHD36NQ03LT-VB is suitable for switching power supplies and DC-DC converters. It performs well in efficient energy conversion. Through its low on-resistance, it reduces energy loss and improves overall efficiency.
2. **Motor drive**: In motor control circuits, this MOSFET can provide high current support and is suitable for various power tools and household appliances to ensure smooth start-up and efficient operation.
3. **LED drive circuit**: In LED drive applications, this device can accurately control LED current and optimize lighting effects. It is widely used in indoor and outdoor lighting systems.
4. **Battery management system**: PHD36NQ03LT-VB performs well in battery management and charging applications. It can withstand rapid charging and discharging, improve battery safety and life, and is suitable for electric vehicles and energy storage systems.
5. **Consumer electronics**: In the power management of products such as smartphones and tablets, this MOSFET acts as a switching element to effectively control the flow of power and enhance the energy efficiency and performance of the device.
Through these application examples, PHD36NQ03LT-VB demonstrates its wide applicability in multiple electronic fields, providing reliable and efficient solutions for modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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