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PHD36N03LT-VB Product details
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PHD36N03LT-VB Product Introduction
PHD36N03LT-VB is a high-performance N-Channel MOSFET designed with TO252 package, optimized for high current and low voltage applications. The device has a maximum drain-source voltage of 20V and can carry a leakage current of up to 100A, suitable for applications requiring high efficiency and fast switching. It uses advanced Trench technology and has a low on-resistance (RDS(ON)) of only 4.5mΩ at VGS=4.5V, which greatly reduces power consumption and improves system efficiency.
PHD36N03LT-VB is a high-performance N-Channel MOSFET designed with TO252 package, optimized for high current and low voltage applications. The device has a maximum drain-source voltage of 20V and can carry a leakage current of up to 100A, suitable for applications requiring high efficiency and fast switching. It uses advanced Trench technology and has a low on-resistance (RDS(ON)) of only 4.5mΩ at VGS=4.5V, which greatly reduces power consumption and improves system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: PHD36N03LT-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench
- **Model**: PHD36N03LT-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Power management**: PHD36N03LT-VB is widely used in power management circuits, such as DC-DC converters and regulated power supplies, to achieve high current output at low voltage and improve power efficiency.
2. **Power tools**: Suitable for battery-driven systems of various power tools, capable of withstanding large instantaneous currents, ensuring stable operation of tools under high loads.
3. **LED lighting driver**: In LED driver power supplies, this MOSFET can be used as an efficient switch, providing fast current regulation to ensure high brightness and long-term stability of LEDs.
4. **Automotive electronics**: This device can be used as an efficient switch in automotive electronic control modules, suitable for motor control, lighting systems and power distribution, helping to improve the energy efficiency of the entire vehicle.
5. **Consumer electronics**: PHD36N03LT-VB is also suitable for various consumer electronics products, such as portable devices and home appliances, to effectively manage power and optimize performance.
PHD36N03LT-VB is a high-efficiency, low on-resistance MOSFET that is particularly suitable for high current and low voltage applications, meeting the performance and efficiency requirements of modern electronic devices.
1. **Power management**: PHD36N03LT-VB is widely used in power management circuits, such as DC-DC converters and regulated power supplies, to achieve high current output at low voltage and improve power efficiency.
2. **Power tools**: Suitable for battery-driven systems of various power tools, capable of withstanding large instantaneous currents, ensuring stable operation of tools under high loads.
3. **LED lighting driver**: In LED driver power supplies, this MOSFET can be used as an efficient switch, providing fast current regulation to ensure high brightness and long-term stability of LEDs.
4. **Automotive electronics**: This device can be used as an efficient switch in automotive electronic control modules, suitable for motor control, lighting systems and power distribution, helping to improve the energy efficiency of the entire vehicle.
5. **Consumer electronics**: PHD36N03LT-VB is also suitable for various consumer electronics products, such as portable devices and home appliances, to effectively manage power and optimize performance.
PHD36N03LT-VB is a high-efficiency, low on-resistance MOSFET that is particularly suitable for high current and low voltage applications, meeting the performance and efficiency requirements of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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