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PHD34NQ10T-VB Product details
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PHD34NQ10T-VB Product Introduction
PHD34NQ10T-VB is a high-performance N-Channel MOSFET in TO252 package, designed for medium and high voltage applications. Its maximum drain-source voltage (VDS) is 100V, and the maximum drain current (ID) can reach 40A, which is suitable for power conversion and drive circuits. The device has a threshold voltage (Vth) of 1.8V and has an extremely low on-resistance (RDS(ON)). At a gate-source voltage of 10V, the on-resistance is as low as 30mΩ, which can significantly reduce energy loss. PHD34NQ10T-VB uses Trench technology to ensure high efficiency and reliability in high-frequency applications.
PHD34NQ10T-VB is a high-performance N-Channel MOSFET in TO252 package, designed for medium and high voltage applications. Its maximum drain-source voltage (VDS) is 100V, and the maximum drain current (ID) can reach 40A, which is suitable for power conversion and drive circuits. The device has a threshold voltage (Vth) of 1.8V and has an extremely low on-resistance (RDS(ON)). At a gate-source voltage of 10V, the on-resistance is as low as 30mΩ, which can significantly reduce energy loss. PHD34NQ10T-VB uses Trench technology to ensure high efficiency and reliability in high-frequency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: PHD34NQ10T-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 30mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench
- **Model**: PHD34NQ10T-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 30mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench
Domain and module applications：
Applications and modules
PHD34NQ10T-VB can be widely used in the following areas:
1. **Power management**:
- This MOSFET is used as an efficient switch in switching power supplies (SMPS) and DC-DC converters, which can provide stable output while reducing power consumption. It is suitable for computer power supplies and communication equipment.
2. **Motor drive**:
- In motor control circuits, it is used as a switching element to achieve efficient motor starting and speed regulation. It is suitable for industrial automation and electric vehicle drive systems.
3. **LED drive**:
- Suitable for LED lighting applications, by controlling the current to adjust the brightness of the LED, improving the overall lighting effect and efficiency.
4. **Battery management system**:
- In battery charge and discharge control, it is used to efficiently manage the battery status and improve the performance and safety of the battery. It is widely used in mobile devices and electric vehicles.
5. **Consumer Electronics**:
- As a power management component, it improves the overall energy efficiency of consumer electronics products, suitable for smartphones, tablets and other portable electronic devices.
With its excellent performance and wide application range, PHD34NQ10T-VB is an ideal choice for a variety of power and drive applications.
PHD34NQ10T-VB can be widely used in the following areas:
1. **Power management**:
- This MOSFET is used as an efficient switch in switching power supplies (SMPS) and DC-DC converters, which can provide stable output while reducing power consumption. It is suitable for computer power supplies and communication equipment.
2. **Motor drive**:
- In motor control circuits, it is used as a switching element to achieve efficient motor starting and speed regulation. It is suitable for industrial automation and electric vehicle drive systems.
3. **LED drive**:
- Suitable for LED lighting applications, by controlling the current to adjust the brightness of the LED, improving the overall lighting effect and efficiency.
4. **Battery management system**:
- In battery charge and discharge control, it is used to efficiently manage the battery status and improve the performance and safety of the battery. It is widely used in mobile devices and electric vehicles.
5. **Consumer Electronics**:
- As a power management component, it improves the overall energy efficiency of consumer electronics products, suitable for smartphones, tablets and other portable electronic devices.
With its excellent performance and wide application range, PHD34NQ10T-VB is an ideal choice for a variety of power and drive applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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