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PHD23NQ10T-VB Product details
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Product Introduction
PHD23NQ10T-VB is a high-performance N-channel MOSFET in TO252 package, designed for high-voltage and high-efficiency switching applications. Its drain-source voltage (VDS) is 100V, suitable for various power management and power conversion circuits. The threshold voltage (Vth) of the device is 1.8V, ensuring stable operation even under low voltage conditions. At VGS=4.5V, the on-resistance (RDS(ON)) is 35mΩ, which decreases to 30mΩ at VGS=10V, supporting a continuous drain current (ID) of up to 40A. Utilizing Trench technology, this MOSFET performs well in high-frequency and high-efficiency applications, significantly reducing power consumption and heat generation.
PHD23NQ10T-VB is a high-performance N-channel MOSFET in TO252 package, designed for high-voltage and high-efficiency switching applications. Its drain-source voltage (VDS) is 100V, suitable for various power management and power conversion circuits. The threshold voltage (Vth) of the device is 1.8V, ensuring stable operation even under low voltage conditions. At VGS=4.5V, the on-resistance (RDS(ON)) is 35mΩ, which decreases to 30mΩ at VGS=10V, supporting a continuous drain current (ID) of up to 40A. Utilizing Trench technology, this MOSFET performs well in high-frequency and high-efficiency applications, significantly reducing power consumption and heat generation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: PHD23NQ10T-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ (@VGS=4.5V)
- 30mΩ (@VGS=10V)
- **Continuous leakage current (ID)**: 40A
- **Technology**: Trench
- **Model**: PHD23NQ10T-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ (@VGS=4.5V)
- 30mΩ (@VGS=10V)
- **Continuous leakage current (ID)**: 40A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power management**: PHD23NQ10T-VB is very suitable for switching power supplies (SMPS) and DC-DC converters. It can effectively improve energy efficiency and reduce standby power consumption. It is widely used in consumer electronics and computer power modules.
2. **Motor drive**: In motor control applications, this MOSFET can be used as a switching element in the H-bridge to provide efficient current control. It is suitable for motor drive systems in home appliances, electric vehicles and industrial automation equipment.
3. **LED drive**: This device also performs well in LED lighting systems. It can provide stable current to LEDs and achieve brightness adjustment. It is suitable for indoor and outdoor lighting applications.
4. **Inverter**: In renewable energy systems, such as solar inverters, PHD23NQ10T-VB can be used in high-frequency switching circuits to improve energy conversion efficiency and optimize power utilization and system performance.
1. **Power management**: PHD23NQ10T-VB is very suitable for switching power supplies (SMPS) and DC-DC converters. It can effectively improve energy efficiency and reduce standby power consumption. It is widely used in consumer electronics and computer power modules.
2. **Motor drive**: In motor control applications, this MOSFET can be used as a switching element in the H-bridge to provide efficient current control. It is suitable for motor drive systems in home appliances, electric vehicles and industrial automation equipment.
3. **LED drive**: This device also performs well in LED lighting systems. It can provide stable current to LEDs and achieve brightness adjustment. It is suitable for indoor and outdoor lighting applications.
4. **Inverter**: In renewable energy systems, such as solar inverters, PHD23NQ10T-VB can be used in high-frequency switching circuits to improve energy conversion efficiency and optimize power utilization and system performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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