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PHD22NQ20T-VB Product details
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PHD22NQ20T-VB Product Introduction
PHD22NQ20T-VB is a high-performance N-channel MOSFET in TO252 package, designed for high voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 200V, which is suitable for high voltage power management systems. Its on-resistance (RDS(ON)) is only 55mΩ at VGS of 10V, ensuring excellent conductivity under load conditions, which can effectively reduce heat generation and improve the overall efficiency of the system.
PHD22NQ20T-VB is a high-performance N-channel MOSFET in TO252 package, designed for high voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 200V, which is suitable for high voltage power management systems. Its on-resistance (RDS(ON)) is only 55mΩ at VGS of 10V, ensuring excellent conductivity under load conditions, which can effectively reduce heat generation and improve the overall efficiency of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | 55mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: PHD22NQ20T-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 55mΩ @ VGS=10V
- **Maximum drain current (ID)**: 30A
- **Technology**: Trench technology (Trench)
- **Model**: PHD22NQ20T-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 55mΩ @ VGS=10V
- **Maximum drain current (ID)**: 30A
- **Technology**: Trench technology (Trench)
Domain and module applications：
Application fields and module examples
The excellent performance of PHD22NQ20T-VB enables it to perform well in multiple fields and modules. Here are some specific application examples:
1. **Power converter**: The high voltage capability and low on-resistance of this MOSFET make it very suitable for DC-DC converters, which helps to improve conversion efficiency and is widely used in switching power supplies and power adapters.
2. **Motor drive**: In motor control systems, PHD22NQ20T-VB can provide stable current and fast switching capabilities, which is suitable for driving brushless motors and stepper motors, ensuring efficient operation and long life of the motor.
3. **LED drive circuit**: In LED drive applications, this MOSFET can provide reliable current control to ensure the brightness and performance of the LED system, suitable for various lighting and display applications.
4. **Battery management system**: PHD22NQ20T-VB performs well in battery charge and discharge management, ensuring battery safety and efficiency, and is suitable for electric vehicles and energy storage systems.
5. **Consumer Electronics**: This MOSFET is widely used in consumer electronic devices such as smartphones, tablets, and portable chargers, providing efficient power management and protection for these devices.
Through these application examples, the diversity and high performance of the PHD22NQ20T-VB are demonstrated, making it an indispensable component in modern electronic design.
The excellent performance of PHD22NQ20T-VB enables it to perform well in multiple fields and modules. Here are some specific application examples:
1. **Power converter**: The high voltage capability and low on-resistance of this MOSFET make it very suitable for DC-DC converters, which helps to improve conversion efficiency and is widely used in switching power supplies and power adapters.
2. **Motor drive**: In motor control systems, PHD22NQ20T-VB can provide stable current and fast switching capabilities, which is suitable for driving brushless motors and stepper motors, ensuring efficient operation and long life of the motor.
3. **LED drive circuit**: In LED drive applications, this MOSFET can provide reliable current control to ensure the brightness and performance of the LED system, suitable for various lighting and display applications.
4. **Battery management system**: PHD22NQ20T-VB performs well in battery charge and discharge management, ensuring battery safety and efficiency, and is suitable for electric vehicles and energy storage systems.
5. **Consumer Electronics**: This MOSFET is widely used in consumer electronic devices such as smartphones, tablets, and portable chargers, providing efficient power management and protection for these devices.
Through these application examples, the diversity and high performance of the PHD22NQ20T-VB are demonstrated, making it an indispensable component in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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