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PHD22NQ20T-01-VB Product details
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Product Introduction
PHD22NQ20T-01-VB is a high-efficiency N-channel MOSFET in TO252 package, designed for high voltage and high current applications. The device has a rated drain-source voltage of 200V and excellent on-resistance, suitable for use in high-frequency and high-efficiency power conversion. With a drain current capability of up to 30A and excellent thermal performance, the PHD22NQ20T-01-VB is ideal for a variety of applications such as power management, motor drives and automotive electronics.
PHD22NQ20T-01-VB is a high-efficiency N-channel MOSFET in TO252 package, designed for high voltage and high current applications. The device has a rated drain-source voltage of 200V and excellent on-resistance, suitable for use in high-frequency and high-efficiency power conversion. With a drain current capability of up to 30A and excellent thermal performance, the PHD22NQ20T-01-VB is ideal for a variety of applications such as power management, motor drives and automotive electronics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | 55mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: PHD22NQ20T-01-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 200V
- **VGS (gate-source voltage)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **RDS(ON)**:
- 55mΩ @ VGS = 10V
- **ID (drain current)**: 30A
- **Technology**: Trench process (Trench)
- **Model**: PHD22NQ20T-01-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 200V
- **VGS (gate-source voltage)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **RDS(ON)**:
- 55mΩ @ VGS = 10V
- **ID (drain current)**: 30A
- **Technology**: Trench process (Trench)
Domain and module applications：
Application fields and modules
PHD22NQ20T-01-VB MOSFET can be widely used in the following fields and modules:
1. **Power management**: In switching power supplies and DC-DC converters, the low on-resistance and high current capability of this MOSFET enable efficient power transmission, and it is widely used in power regulation and management modules to improve overall energy efficiency.
2. **Motor control**: This device performs well in motor drive systems and is suitable for handling high voltage and high current applications, ensuring fast start-up and stable operation of motors, and is widely used in industrial automation and electric vehicles.
3. **LED drive**: PHD22NQ20T-01-VB can efficiently drive high-power LEDs, suitable for various lighting solutions, providing stable brightness and longer service life to meet different lighting needs.
4. **Automotive electronics**: This MOSFET is suitable for automotive power management and power conversion, and can operate stably under high current and high voltage conditions, and is suitable for battery management systems and motor control modules.
5. **Consumer Electronics**: In smart devices and home appliances, PHD22NQ20T-01-VB can be used for power switching and signal conditioning to optimize energy consumption, improve device performance, and provide users with a better experience.
PHD22NQ20T-01-VB MOSFET can be widely used in the following fields and modules:
1. **Power management**: In switching power supplies and DC-DC converters, the low on-resistance and high current capability of this MOSFET enable efficient power transmission, and it is widely used in power regulation and management modules to improve overall energy efficiency.
2. **Motor control**: This device performs well in motor drive systems and is suitable for handling high voltage and high current applications, ensuring fast start-up and stable operation of motors, and is widely used in industrial automation and electric vehicles.
3. **LED drive**: PHD22NQ20T-01-VB can efficiently drive high-power LEDs, suitable for various lighting solutions, providing stable brightness and longer service life to meet different lighting needs.
4. **Automotive electronics**: This MOSFET is suitable for automotive power management and power conversion, and can operate stably under high current and high voltage conditions, and is suitable for battery management systems and motor control modules.
5. **Consumer Electronics**: In smart devices and home appliances, PHD22NQ20T-01-VB can be used for power switching and signal conditioning to optimize energy consumption, improve device performance, and provide users with a better experience.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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