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PHD18NQ10T-VB Product details
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Product Introduction
PHD18NQ10T-VB is a high-efficiency unipolar N-type MOSFET in TO252 package, designed for medium and high voltage applications. The device has a maximum drain-source voltage (VDS) of 100V, suitable for a variety of switching power supplies and drive circuits. Its on-resistance (RDS(ON)) is only 114mΩ at VGS of 10V, ensuring very low power consumption in the on state, thereby improving overall circuit efficiency. The threshold voltage (Vth) is 1.8V, which enables it to have fast response capabilities, making it very suitable for high-frequency switching applications.
PHD18NQ10T-VB is a high-efficiency unipolar N-type MOSFET in TO252 package, designed for medium and high voltage applications. The device has a maximum drain-source voltage (VDS) of 100V, suitable for a variety of switching power supplies and drive circuits. Its on-resistance (RDS(ON)) is only 114mΩ at VGS of 10V, ensuring very low power consumption in the on state, thereby improving overall circuit efficiency. The threshold voltage (Vth) is 1.8V, which enables it to have fast response capabilities, making it very suitable for high-frequency switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: PHD18NQ10T-VB
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 114mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 15A
- **Technology**: Trench technology
- **Model**: PHD18NQ10T-VB
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 114mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 15A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Switching Power Supply**: PHD18NQ10T-VB is ideal for switching power supply (SMPS), especially in power supply designs that require high conversion efficiency. Its low on-resistance can effectively reduce heat loss and improve power efficiency.
2. **Motor Drive**: This MOSFET can be used in motor drive circuits and is widely used in home appliances, industrial equipment, and automation control systems. Its high current carrying capacity ensures stability during motor startup and operation.
3. **LED Drive**: In LED lighting solutions, PHD18NQ10T-VB can be used as an LED driver to ensure efficient driving of light sources and reduce energy consumption.
4. **Battery Management System**: This MOSFET is also suitable for charge and discharge control in battery management systems, especially in electric vehicles and renewable energy systems, providing safe and reliable battery performance management.
With its excellent electrical characteristics, PHD18NQ10T-VB is an ideal choice for a variety of modern electronic applications, meeting the design requirements of high efficiency and high performance.
1. **Switching Power Supply**: PHD18NQ10T-VB is ideal for switching power supply (SMPS), especially in power supply designs that require high conversion efficiency. Its low on-resistance can effectively reduce heat loss and improve power efficiency.
2. **Motor Drive**: This MOSFET can be used in motor drive circuits and is widely used in home appliances, industrial equipment, and automation control systems. Its high current carrying capacity ensures stability during motor startup and operation.
3. **LED Drive**: In LED lighting solutions, PHD18NQ10T-VB can be used as an LED driver to ensure efficient driving of light sources and reduce energy consumption.
4. **Battery Management System**: This MOSFET is also suitable for charge and discharge control in battery management systems, especially in electric vehicles and renewable energy systems, providing safe and reliable battery performance management.
With its excellent electrical characteristics, PHD18NQ10T-VB is an ideal choice for a variety of modern electronic applications, meeting the design requirements of high efficiency and high performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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