中文
English
PHD16N03LT-VB Product details
Back to previous pageProduct introduction：
Product Introduction: PHD16N03LT-VB
PHD16N03LT-VB is a high-efficiency single N-channel MOSFET in a TO252 package, designed for low-voltage and high-current applications. Its maximum drain-source voltage (VDS) is 30V, and it can support a drain current (ID) of up to 70A, making it an excellent performer in applications requiring high current. The device has a threshold voltage (Vth) of 1.7V, ensuring that it turns on quickly at a lower gate-source voltage. The PHD16N03LT-VB has an extremely low on-resistance (RDS(ON)) of 9mΩ and 7mΩ at gate-source voltages of 4.5V and 10V, respectively, achieving efficient current control and reducing power consumption and heat generation.
PHD16N03LT-VB is a high-efficiency single N-channel MOSFET in a TO252 package, designed for low-voltage and high-current applications. Its maximum drain-source voltage (VDS) is 30V, and it can support a drain current (ID) of up to 70A, making it an excellent performer in applications requiring high current. The device has a threshold voltage (Vth) of 1.7V, ensuring that it turns on quickly at a lower gate-source voltage. The PHD16N03LT-VB has an extremely low on-resistance (RDS(ON)) of 9mΩ and 7mΩ at gate-source voltages of 4.5V and 10V, respectively, achieving efficient current control and reducing power consumption and heat generation.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
- **Model**: PHD16N03LT-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON)**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **ID (leakage current)**: 70A
- **Technology**: Trench
- **Model**: PHD16N03LT-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON)**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **ID (leakage current)**: 70A
- **Technology**: Trench
Domain and module applications：
Application areas and module examples:
1. **Power management system**: PHD16N03LT-VB is suitable for switching power supplies (SMPS) and DC-DC converters. Through its ultra-low on-resistance, it can achieve efficient energy conversion, reduce power loss, and meet various power management needs.
2. **Power tools**: In the drive circuit of power tools, this MOSFET can withstand currents up to 70A and provide strong starting currents to ensure high efficiency and durability of power tools.
3. **LED drive circuit**: This device performs well in LED lighting applications, can effectively control the current of LEDs, ensure stable brightness, and is suitable for driving various types of lighting equipment.
4. **Battery management system**: PHD16N03LT-VB can be used in battery management systems, support fast charging and safe discharge, optimize battery efficiency, and is widely used in electric vehicles and energy storage equipment.
5. **Consumer electronics**: In consumer electronics products such as smartphones and tablets, this MOSFET acts as a power switch, which can effectively control power management and improve the energy efficiency and service life of the equipment.
Through the above application examples, PHD16N03LT-VB demonstrates its wide applicability in multiple fields, providing efficient and reliable solutions for modern electronic design.
1. **Power management system**: PHD16N03LT-VB is suitable for switching power supplies (SMPS) and DC-DC converters. Through its ultra-low on-resistance, it can achieve efficient energy conversion, reduce power loss, and meet various power management needs.
2. **Power tools**: In the drive circuit of power tools, this MOSFET can withstand currents up to 70A and provide strong starting currents to ensure high efficiency and durability of power tools.
3. **LED drive circuit**: This device performs well in LED lighting applications, can effectively control the current of LEDs, ensure stable brightness, and is suitable for driving various types of lighting equipment.
4. **Battery management system**: PHD16N03LT-VB can be used in battery management systems, support fast charging and safe discharge, optimize battery efficiency, and is widely used in electric vehicles and energy storage equipment.
5. **Consumer electronics**: In consumer electronics products such as smartphones and tablets, this MOSFET acts as a power switch, which can effectively control power management and improve the energy efficiency and service life of the equipment.
Through the above application examples, PHD16N03LT-VB demonstrates its wide applicability in multiple fields, providing efficient and reliable solutions for modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
