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PHD14NQ20T-VB Product details
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PHD14NQ20T-VB Product Introduction
PHD14NQ20T-VB is a high-performance N-Channel MOSFET designed with TO252 package. The device has a maximum drain-source voltage of 200V and can carry a leakage current of up to 30A, making it suitable for use in high-voltage and high-current applications. With its advanced Trench technology, PHD14NQ20T-VB has a low on-resistance (RDS(ON)) of only 55mΩ at VGS=10V, thereby optimizing power loss and improving system efficiency.
PHD14NQ20T-VB is a high-performance N-Channel MOSFET designed with TO252 package. The device has a maximum drain-source voltage of 200V and can carry a leakage current of up to 30A, making it suitable for use in high-voltage and high-current applications. With its advanced Trench technology, PHD14NQ20T-VB has a low on-resistance (RDS(ON)) of only 55mΩ at VGS=10V, thereby optimizing power loss and improving system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | 55mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: PHD14NQ20T-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 55mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 30A
- **Technology**: Trench
- **Model**: PHD14NQ20T-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 55mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 30A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Power converter**: PHD14NQ20T-VB is widely used in switching power supplies and DC-DC converters, and can work stably under high voltage conditions to ensure power efficiency and performance.
2. **Electric vehicles**: In the power management and motor drive system of electric vehicles, this MOSFET can be used as an efficient switch to handle large currents and improve the power and endurance of the vehicle.
3. **Industrial control**: Suitable for various industrial automation equipment, such as inverters and motor controllers, with its high reliability and strong current carrying capacity, it ensures the stable operation of the equipment.
4. **Consumer electronics**: In high-power consumer electronics products, such as large household appliances and chargers, PHD14NQ20T-VB can effectively reduce energy consumption and improve the overall energy efficiency of the product.
5. **LED driver**: This device has a good application in LED lighting driver circuits, and can accurately control the current output to ensure the high brightness and long life of the LED.
PHD14NQ20T-VB is a powerful MOSFET suitable for a variety of high voltage and high current applications, and can meet the stringent requirements of modern equipment for high performance and high efficiency.
1. **Power converter**: PHD14NQ20T-VB is widely used in switching power supplies and DC-DC converters, and can work stably under high voltage conditions to ensure power efficiency and performance.
2. **Electric vehicles**: In the power management and motor drive system of electric vehicles, this MOSFET can be used as an efficient switch to handle large currents and improve the power and endurance of the vehicle.
3. **Industrial control**: Suitable for various industrial automation equipment, such as inverters and motor controllers, with its high reliability and strong current carrying capacity, it ensures the stable operation of the equipment.
4. **Consumer electronics**: In high-power consumer electronics products, such as large household appliances and chargers, PHD14NQ20T-VB can effectively reduce energy consumption and improve the overall energy efficiency of the product.
5. **LED driver**: This device has a good application in LED lighting driver circuits, and can accurately control the current output to ensure the high brightness and long life of the LED.
PHD14NQ20T-VB is a powerful MOSFET suitable for a variety of high voltage and high current applications, and can meet the stringent requirements of modern equipment for high performance and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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